FORMATION OF PLATINUM SILICIDE LAYERS DURING THE RAPID THERMAL PROCESSING OF THE SYSTEM PLATINUM-SILICON: STRUCTURAL-PHASE CHANGES

2019 ◽  
Author(s):  
Vitaliy Solodukha ◽  
Vladimir Pilipenko ◽  
Valentina Gorushko ◽  
Fadei Komarov ◽  
Oleg Milchanin
Keyword(s):  
Thermal Processing ◽  
Structural Phase ◽  
Rapid Thermal Processing ◽  
Phase Changes ◽  
Platinum Silicide

Kinetics of platinum silicide formation during rapid thermal processing

1992 ◽  
Vol 72 (5) ◽  
pp. 1833-1836 ◽  
Author(s):  
A. K. Pant ◽  
S. P. Murarka ◽  
C. Shepard ◽  
W. Lanford
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

Optical Switching of Coherent VO2 Precipitates Embedded in Sapphire

1995 ◽  
Vol 396 ◽  
Author(s):  
L. A. Gea ◽  
L. A. Boatner ◽  
J. D. Budai ◽  
R. A. Zuhr
Keyword(s):  
Phase Transition ◽  
Vanadium Dioxide ◽  
Thermal Processing ◽  
Optical Switching ◽  
Optical Transmission ◽  
Structural Phase ◽  
Switching Behavior ◽  
New Type ◽  
Single Crystal Sapphire ◽  
Smart Surface

AbstractIn this work, we report the formation of a new type of active or “smart” surface that is produced by ion implantation and thermal processing. By co-implanting vanadium and oxygen into a single-crystal sapphire substrate and annealing the system under appropriate conditions, it was possible to form buried precipitates of vanadium dioxide that were crystallographically oriented with respect to the host AI2O3 lattice. The implanted VO2 precipitate system undergoes a structural phase transition that is accompanied by large variations in the optical transmission which are comparable to those observed for thin films of VO2 deposited on sapphire. Co-implantation with oxygen was found to be necessary to ensure good optical switching behavior.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control
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