Dynamical X-ray Rocking curve Simulations of InGaAsP/InP Double Heterostruciures using Abeles' Matrix Method

1986 ◽  
Vol 90 ◽  
Author(s):  
A. T. Macrander ◽  
B. M. Glasgow ◽  
E. R. Minami ◽  
R. F. Karlicek ◽  
D. L. Mitcham ◽  
...  
Keyword(s):  
Active Layer ◽  
Vapor Phase ◽  
Matrix Method ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray

ABSTRACTSimulated rocking curves for a light-emitting diode structure are presented. Results for a structure containing uniform layers are compared to rocking curve data for a wafer grown by vapor phase epitaxy (VPE), and we conclude from the comparison that the VPE wafer closely approached the hypothetical ideal assumed in the simulations. Simulations illustrating difficulties in analyses and the effects of a graded active layer are also presented.

P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2489-2492 ◽  
Author(s):  
Chih-Hsin Ko ◽  
Yan-Kuin Su ◽  
Shoou-Jinn Chang ◽  
Ta-Ming Kuan ◽  
Chung-I Chiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Organic Vapor ◽  
Metal Organic

Regularly-patterned nanorod light-emitting diode arrays grown with metalorganic vapor-phase epitaxy

2015 ◽  
Vol 83 ◽  
pp. 329-341 ◽  
Author(s):  
Charng-Gan Tu ◽  
Chia-Ying Su ◽  
Che-Hao Liao ◽  
Chieh Hsieh ◽  
Yu-Feng Yao ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diode ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Light Emitting

Characterization of lattice mosaic ofa-plane GaN grown onr-plane sapphire by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Morphological Transition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

2017 ◽  
Vol 110 (10) ◽  
pp. 102104 ◽  
Author(s):  
S. Neugebauer ◽  
M. P. Hoffmann ◽  
H. Witte ◽  
J. Bläsing ◽  
A. Dadgar ◽  
...  
Keyword(s):  
Blue Light ◽  
Vapor Phase ◽  
Tunnel Junction ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Metalorganic Chemical

scholarly journals Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

2016 ◽  
Vol 19 (2) ◽  
pp. 75-86
Author(s):  
A. Y. Polyakov ◽  
Jin-Hyeon Yun ◽  
A. S. Usikov ◽  
E. B. Yakimov ◽  
N. B. Smirnov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Strain Relaxation ◽  
Luminescent Properties ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Light Emitting ◽  
The Difference

Electrical and luminescent properties of near−UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates) of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

Characterization of Epilayers in Vertical Light-Emitting Diode Grown by Mixed-Source Hydride Vapor Phase Epitaxy

2020 ◽  
Vol 70 (4) ◽  
pp. 315-321
Author(s):  
Kyoung Hwa KIM ◽  
Gang Seok LEE ◽  
Hyung Soo AHN* ◽  
Injun JEON ◽  
Chae Ryong CHO ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting

Vertical-Type Phosphor-Free White-Light-Emitting Diode Fabricated by Using a Mixed-Source Hydride Vapor-Phase Epitaxy Method

2018 ◽  
Vol 68 (7) ◽  
pp. 742-748
Author(s):  
Kyoung Hwa KIM ◽  
Hyung Soo AHN* ◽  
Min YANG ◽  
Sam Nyung YI ◽  
Hunsoo JEON ◽  
...  
Keyword(s):  
Vapor Phase ◽  
White Light ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting
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