ABSTRACTThe delineation of n-p junctions is one of the techniques routinely required in the analysis of electronic devices. The delineation of the junction profile is typically done either in a scanning electron microscope (SEM) or by angle lapping / staining/ optical microscopy. Recently TEM foils have been selectively etched to simultaneously provide an interface demarcation and an image of processed induced dislocations. A case study is presented in this report on concentration dependent delineation techniques with emphasis on the special problems associated with cross sectional transmission electron microscopy (XTEM) samples. The etchants used in delineating junctions for the SEM or with angle lapping / optical microscopy of transistors are too aggressive for the extremely thin TEM foils. This paper discusses etchants which deliver reproducible, high contrast delineations in XTEM samples with known concentration profiles.
Elucidating fuel cell catalyst degradation mechanisms by identical-location transmission electron microscopy
