scholarly journals Utilizing Low-Dose Transmission Electron Microscopy for Structure and Defect Identification in Group III - Nitride Electronic Devices

2018 ◽  
Vol 24 (S1) ◽  
pp. 1972-1973 ◽  
Author(s):  
Petra Specht ◽  
Martina Luysberg ◽  
J. Chavez ◽  
T.R. Weatherford ◽  
T.J. Anderson ◽  
...  
2014 ◽  
Vol 20 (S3) ◽  
pp. 2140-2141
Author(s):  
Anchi Cheng ◽  
James Pulokas ◽  
Sargis Dallakyan ◽  
Amber Herold ◽  
Clinton S. Potter ◽  
...  

Author(s):  
H.H. Yap ◽  
P.K. Tan ◽  
J. Lam ◽  
T.H. Ng ◽  
G.R. Low ◽  
...  

Abstract With the scaling of semiconductor devices to nanometer range, ensuring surface uniformity over a large area while performing top down physical delayering has become a greater challenge. In this paper, the application of laser deprocessing technique (LDT) to achieve better surface uniformity as well as for fast deprocessing of sample for defect identification in nanoscale devices are discussed. The proposed laser deprocess technique is a cost-effective and quick way to deprocess sample for defect identification and Transmission Electron Microscopy (TEM) analysis.


2018 ◽  
Vol 24 (S1) ◽  
pp. 1968-1969 ◽  
Author(s):  
David F. Yancey ◽  
Christian Kisielowski ◽  
Petra Specht ◽  
Steve Rozeveld ◽  
Joo Kang ◽  
...  

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