scholarly journals Low-Cost Test and Characterization Platform for Memristors

2020 ◽  
Author(s):  
Lyle Jones
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Electrical Characterization ◽  
Ease Of Use ◽  
Voltage Range ◽  
Threshold Voltages ◽  
Hands On ◽  
Test Platform ◽  
Software And Hardware

The electrical Testing and Characterization of the devices built under research conditions on silicon wafers, diced wafers, or package parts have hampered research since the beginning of integrated circuits. The challenges of performing electrical characterization on devices are to acquire useful and accurate data, the ease of use of the test platform, the portability of the test equipment, the ability to automate quickly, to allow modifications to the platform, the ability to change the configuration of the Device Under Test (DUT) or the Memristor Based Design (MBD), and to do this within budget. The devices that this research is focused on are memristors with unique test challenges. Some of the tests performed on memristors are Voltage sweeps, pulsing of Voltages, and threshold Voltages. Standard methods of testing memristors usually require hands-on experience, multiple bulky work stations, and hours of training. This work reports a novel, low-cost, portable test and characterization platform for many types of memristors with a voltage range from -10V to +10V, which is portable, low-cost, built with off-the-shelf components, and with configurability through software and hardware. To demonstrate the performance of the platform, the platform was able to take a virgin memristor from “forming” to operation voltages, and then incrementally change resistances by Voltage Pulsing. The platform within this work allows the researcher flexibility in electrical characterization by being able to accept many memristor types and MBDs, and applying environmental conditions to the MBD, with this flexibility of the platform the productivity of the researcher will increase.

A compact low-cost test equipment for thermal and electrical characterization of integrated circuits

Measurement ◽  
2009 ◽  
Vol 42 (2) ◽  
pp. 281-289 ◽  
Author(s):  
Alessandro Cabrini ◽  
Laura Gobbi ◽  
Davide Baderna ◽  
Guido Torelli
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Electrical Characterization ◽  
Test Equipment

Removal of Ni(II) from aqueous solution using Moringa oleifera seeds as a bioadsorbent

2012 ◽  
Vol 65 (8) ◽  
pp. 1435-1440 ◽  
Author(s):  
Thiago L. Marques ◽  
Vanessa N. Alves ◽  
Luciana M. Coelho ◽  
Nívia M. M. Coelho
Keyword(s):  
Moringa Oleifera ◽  
Low Cost ◽  
Ease Of Use ◽  
Toxic Waste ◽  
Adsorption Model ◽  
New Techniques ◽  
Sorption Data ◽  
Natural Adsorbents ◽  
Ph Range

Metal contaminants are generally removed from effluents by chemical and physical processes which are often associated with disadvantages such as the use of toxic reagents, generation of toxic waste and high costs. Hence, new techniques have been developed, among them the study of natural adsorbents, for instance, the use of Moringa oleifera seeds. The potential of M. oleifera seeds for nickel removal in aqueous systems was investigated. The seeds utilized were obtained from plants grown in Uberlândia/Brazil. After being dried and pulverized, the seeds were treated with 0.1 mol/L NaOH. Fourier transform infrared spectroscopy, scanning electron microscopy and thermogravimetric analyses were used for the characterization of the material. Using the optimized methodology (50 mL of 4.0 mg/L Ni(II), pH range of 4.0–6.0, agitation time of 5 min and adsorption mass of 2.0 g) more than 90% of Ni(II) could be removed from water samples. The sorption data were fitted satisfactorily by the Langmuir adsorption model. Evaluation applying the Langmuir equation gave the monolayer sorption capacity as 29.6 mg/g. The results indicate that this material could be employed in the extraction of nickel, considering its ease of use, low cost and environmental viability, which make it highly attractive for application in developing countries.

Structural and electrical characterization of carbon nanotube interconnects by combined transmission electron microscopy and scanning spreading resistance microscopy

2011 ◽  
Vol 1349 ◽  
Author(s):  
Thomas Hantschel ◽  
Xiaoxing Ke ◽  
Nicolo’ Chiodarelli ◽  
Andreas Schulze ◽  
Hugo Bender ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuits ◽  
Quantitative Measurement ◽  
Electrical Characterization ◽  
Research Needs ◽  
Spreading Resistance ◽  
Transmission Electron ◽  
Plane View

ABSTRACTThe use of carbon nanotubes (CNT) as interconnects in future integrated circuits (IC) is being considered as a replacement for copper. As this research needs also innovative metrology solutions, we have developed a combined approach for the plane-view analysis of CNT integrated in contact holes where transmission electron microscopy (TEM) enables the quantitative measurement of density and structure of the CNT and where scanning spreading resistance microscopy (SSRM) is used to electrically map the distribution of the CNT. This paper explains the used methodologies in detail and presents results from 300 nm diameter contact holes filled with CNT of 8-12 nm in diameter and a density of about 2 x 1011 cm-2.

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

2011 ◽  
Vol 276 ◽  
pp. 87-93
Author(s):  
Y.Y. Gomeniuk ◽  
Y.V. Gomeniuk ◽  
A. Nazarov ◽  
P.K. Hurley ◽  
Karim Cherkaoui ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Oxide ◽  
Interface State ◽  
Channel Length ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Threshold Voltages

The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO3/Si interface is presented and typical maxima of 1.2×1011 eV–1cm–2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 µm and 50 µm, respectively) are presented. The front channel mobility appeared to be 126 cm2V–1s–1 and 70 cm2V–1s–1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

Virtual Probe: A Statistical Framework for Low-Cost Silicon Characterization of Nanoscale Integrated Circuits

2011 ◽  
Vol 30 (12) ◽  
pp. 1814-1827 ◽  
Author(s):  
Wangyang Zhang ◽  
Xin Li ◽  
Frank Liu ◽  
Emrah Acar ◽  
Rob A. Rutenbar ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Statistical Framework

scholarly journals Metrological and Critical Characterization of the Intel D415 Stereo Depth Camera

2018 ◽  
Author(s):  
Monica Carfagni ◽  
Rocco Furferi ◽  
Lapo Governi ◽  
Chiara Santarelli ◽  
Michaela Servi ◽  
...  
Keyword(s):  
Reverse Engineering ◽  
Low Cost ◽  
Ease Of Use ◽  
Engineering Applications ◽  
Human Machine Interaction ◽  
New Device ◽  
Research Fields ◽  
Close Range ◽  
Machine Interaction

Low-cost RGB-D cameras are increasingly used in several research fields including human-machine interaction, safety, robotics, biomedical engineering and even Reverse Engineering applications. Among the plethora of commercial devices, the Intel RealSense cameras proved to be among the best suitable devices, providing a good compromise between cost, ease of use, compactness and precision. Released on the market in January 2018, the new Intel model RealSense D415 has a wide acquisition range (i.e. ~160-10000 mm) and a narrow field of view to capture objects in rapid motion. Given the unexplored potential of this new device, especially when used as a 3D scanner, the present work aims to characterize and to provide metrological considerations on the RealSense D415. In particular, tests are carried out to assess the device performances in the near range (i.e. 100-1000 mm). Characterization is performed by integrating the guidelines of the existing standard (i.e. the German VDI/VDE 2634 part 2 normative) with a number of literature-based strategies. Performance analysis is finally compared against latest close-range sensors, thus providing a useful guidance for researchers and practitioners aiming to use RGB-D cameras in Reverse Engineering applications.

scholarly journals A New Low Cost Current Measurement Circuit with Temperature Compensation

2020 ◽  
Vol 15 (3) ◽  
pp. 1-5
Author(s):  
Antonio Carlos da Costa Telles ◽  
Jair Lins de Emeri ◽  
Saulo Finco ◽  
Luis Eduardo Seixas
Keyword(s):  
Temperature Compensation ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Electrical Characterization ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Exponential Relationship ◽  
Electrical Currents ◽  
Commercial Off The Shelf

The electrical characterization of semiconductors devices, when submitted to ionizing radiation should be done in a large range of currents; however, the instrumentation with this ability is very expensive. This work proposes a low-cost circuit using commercial off-the-shelf components (COTS) that enables the measurement of electrical currents in the order of pA range. The circuit presents an output current that is an amplified version of the current to be measured, using the exponential relationship between currents and voltages in Bipolar Junction Transistors (BJTs) and Metal Oxide Silicon Field Effect Transistors (MOSFETs) when operating in the weak inversion region. Furthermore, a block was introduced in order to compensate the gain’s temperature dependence. The results showed that the operating range for the current that will be measured was more than seven decades using BJTs and five decades by using MOSFETs with a high linearity. The circuit version using MOSFETs was able to measure currents as low as 100 fA. The current gain has also good linearity for over five decades. This circuit has a stable behavior for the range of 20 °C to 40 °C, because of the temperature compensation block.

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