A new approach to the development of perspective compact frequency multipliers of the subterahertz and terahertz bands for on-board electronic equipment

2021 ◽  
Vol 8 ◽  
pp. 111-121
Author(s):  
V.B. Baiburin ◽  
A.S. Rozov ◽  
N.Yu. Khorovodova ◽  
A.S. Ershov ◽  
A.A. Nikiforov

Currently, the increasing interest of researchers is attracted by the theoretical and practical problems of mastering the sub-terahertz and terahertz frequency range. Electronic devices operating in these ranges find effective applications in various fields of science and technology: aerospace equipment, security systems, spectroscopy, medicine, biology and many others. The purpose of this work is to focus on a frequency multiplication device that allows using basic sources of relatively low frequency generation to enter the terahertz frequency range. The results of recent years obtained both on the basis of solid-state effects and with the help of vacuum electronics, in particular, magnetron-type devices, which are characterized by compactness, high resistance to radiation loads, mechanical influences, which is important for on-board equipment, are considered. It is known that at high frequencies, vacuum devices require super-precision manufacturing of decelerating systems. This is essentially the main difficulty. The article proposes a new approach based on the hypothesis of P.L. Kapitsa, which allows to significantly simplify the anode structure of a magnetron multiplier with an acceptable level of output parameters. The achievements of recent years in the field of creating sub-terahertz and terahertz frequency multipliers, mainly for on-board equipment of mobile platforms, taking into account the requirements of aerospace systems, first of all, are noted.

2012 ◽  
Vol 46 (1) ◽  
pp. 121-125 ◽  
Author(s):  
D. G. Paveliev ◽  
Y. I. Koshurinov ◽  
A. S. Ivanov ◽  
A. N. Panin ◽  
V. L. Vax ◽  
...  

2015 ◽  
Vol 74 (19) ◽  
pp. 1767-1776 ◽  
Author(s):  
V. I. Bezborodov ◽  
O.S. Kosiak ◽  
Ye. M. Kuleshov ◽  
V. V. Yachin

2017 ◽  
Vol 76 (10) ◽  
pp. 929-940 ◽  
Author(s):  
Yu. S. Kovshov ◽  
S. S. Ponomarenko ◽  
S. A. Kishko ◽  
A. A. Likhachev ◽  
S. A. Vlasenko ◽  
...  

2013 ◽  
Vol 52 (25) ◽  
pp. 6364 ◽  
Author(s):  
Lin’an Li ◽  
Wei Song ◽  
Zhiyong Wang ◽  
Shibin Wang ◽  
Mingxia He ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.


Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 268
Author(s):  
Victor Pacheco-Peña

The terahertz frequency range (0 [...]


2021 ◽  
Vol 7 (15) ◽  
pp. eabf9809
Author(s):  
Sergey Kovalev ◽  
Hassan A. Hafez ◽  
Klaas-Jan Tielrooij ◽  
Jan-Christoph Deinert ◽  
Igor Ilyakov ◽  
...  

Graphene is conceivably the most nonlinear optoelectronic material we know. Its nonlinear optical coefficients in the terahertz frequency range surpass those of other materials by many orders of magnitude. Here, we show that the terahertz nonlinearity of graphene, both for ultrashort single-cycle and quasi-monochromatic multicycle input terahertz signals, can be efficiently controlled using electrical gating, with gating voltages as low as a few volts. For example, optimal electrical gating enhances the power conversion efficiency in terahertz third-harmonic generation in graphene by about two orders of magnitude. Our experimental results are in quantitative agreement with a physical model of the graphene nonlinearity, describing the time-dependent thermodynamic balance maintained within the electronic population of graphene during interaction with ultrafast electric fields. Our results can serve as a basis for straightforward and accurate design of devices and applications for efficient electronic signal processing in graphene at ultrahigh frequencies.


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