Pr-substituted Bi4Ti3O12 (BPT, Bi4-xPrxTi3O12, x=0.1-0.4) polycrystalline thick films with a-/b-axes orientations and thickness of 2-3 μm were grown on sputter-grown IrO2 layers by chemical solution deposition method for developing lead-free piezoelectric film microdevices. Electric-field-induced strains measurements were performed by double-beam laser displacement meter and longitudinal strain of e=0.25 % under 400 kV/cm and piezoelectric coefficient d33=63 pm/V at 10 Hz were observed in BPT thick film of x=0.1 with a-/b-axes mixed orientations. The value of strain closely related to spontaneous polarization and monotonously decreased with increasing x. Microstructures of 3 μm-thick BPT films were fabricated by photolithography and dry etching processes with several tens micrometers in size.