Development of Lead-Free Piezoelectric Thick Films with a/b-Axis-Oriented Bi4-xPrxTi3O12

2006 ◽  
Vol 301 ◽  
pp. 61-64 ◽  
Author(s):  
Hirofumi Matsuda ◽  
Takashi Iijima
Keyword(s):  
Piezoelectric Coefficient ◽  
Thick Films ◽  
Lead Free ◽  
Piezoelectric Film ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Beam Laser ◽  
Chemical Solution Deposition Method ◽  
Double Beam ◽  
Laser Displacement Meter

Pr-substituted Bi4Ti3O12 (BPT, Bi4-xPrxTi3O12, x=0.1-0.4) polycrystalline thick films with a-/b-axes orientations and thickness of 2-3 μm were grown on sputter-grown IrO2 layers by chemical solution deposition method for developing lead-free piezoelectric film microdevices. Electric-field-induced strains measurements were performed by double-beam laser displacement meter and longitudinal strain of e=0.25 % under 400 kV/cm and piezoelectric coefficient d33=63 pm/V at 10 Hz were observed in BPT thick film of x=0.1 with a-/b-axes mixed orientations. The value of strain closely related to spontaneous polarization and monotonously decreased with increasing x. Microstructures of 3 μm-thick BPT films were fabricated by photolithography and dry etching processes with several tens micrometers in size.

scholarly journals Stable dielectric response in lead-free relaxor K0.5Na0.5NbO3–SrTiO3 thin films

2014 ◽  
Vol 04 (02) ◽  
pp. 1450012 ◽  
Author(s):  
A. Eršte ◽  
A. Kupec ◽  
B. Kmet ◽  
B. Malič ◽  
V. Bobnar
Keyword(s):  
Thin Films ◽  
Dielectric Response ◽  
Chemical Solution Deposition ◽  
Lead Free ◽  
Deposition Method ◽  
Chemical Solution ◽  
Structural Investigations ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Fatigue Endurance

K 0.5 Na 0.5 NbO 3– SrTiO 3 (KNN–STO) thin films of different compositions were prepared by the chemical solution deposition method. While structural investigations confirmed the formation of perovskite solid solution in all developed films, dielectric experiments revealed a relaxor broad dispersive maximum in the sample with 15 mol% of STO, exhibiting for a thin film high ε′ ~ 330 at ~ 210 K. The history-dependent effects of this relaxor sample were compared to those of KNN–STO ceramics and, furthermore, shown to be much weaker than in widely used lead-based ferroelectric and relaxor ( Pb , La )( Zr , Ti ) O 3 ceramics: While fatigue endurance results revealed a slight drop in polarization after 3 × 105 switching cycles, the results of aging of the dielectric constant revealed no notable decrease in its values after 106 s.

Lead Free Bi1/2Na1/2TiO3-CoFe2O4 Magnetoelectric Nanoparticulate Composite Thin Films Prepared by Chemical Solution Deposition Method

2018 ◽  
Vol 765 ◽  
pp. 30-33
Author(s):  
Vinod Kumar ◽  
Mintu Tyagi
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Nanocomposite Films ◽  
Chemical Solution ◽  
Secondary Phases ◽  
Solution Deposition ◽  
Great Opportunity ◽  
Chemical Solution Deposition Method

Magnetoelectric (1−x) BNT−xCFO nanoparticulate thin films with (x= 0, 0.1, 0.2, 0.3) were fabricated by a chemical solution deposition technique. The X-ray diffraction shows that no other secondary phases are observed. Transmission electron microscope (TEM) revels that CFO nanoparticles were well distributed in matrix of BNT. The nanocomposite films exhibit both good magnetic and ferroelectric properties at room temperature (R-T), as well as enhanced magnetoelectric coupling. The composite withx= 0.2, showed the large value ofMEvoltage coefficient (αE) ~ 163 mV/cmOe. TheseMEcomposites provide a great opportunity as potential lead free systems forMEdevices.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Preparation and Properties ofK(Sr0.75Ba0.25)2Nb5O15Thin Films by Chemical Solution Deposition Method

1997 ◽  
Vol 36 (Part 1, No. 9B) ◽  
pp. 5930-5934 ◽  
Author(s):  
Wataru Sakamoto ◽  
Akihiro Kawase ◽  
Toshinobu Yogo ◽  
Shin-ichi Hirano
Keyword(s):  
Chemical Solution Deposition ◽  
Deposition Method ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Development of crack free BLT thick films by chemical solution deposition technique

2015 ◽  
Vol 589 ◽  
pp. 686-691 ◽  
Author(s):  
Subir Roy ◽  
Rajalaxmi Maharana ◽  
Veena M ◽  
Atul Kumar ◽  
Sandip Bysakh ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Thick Films ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Solution Deposition

Microstructural and Ferroelectric Properties of a Chemical Solution Deposited Epitaxial PbZr0.5 Ti0.5O3 Thin Film on a SrRuO3/SrTiO3 Substrate

1999 ◽  
Vol 14 (4) ◽  
pp. 1190-1193 ◽  
Author(s):  
J. H. Kim ◽  
A. T. Chien ◽  
F. F. Lange ◽  
L. Wills
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Transmission Electron ◽  
Saturation Polarization ◽  
Pzt Thin Film ◽  
Relationship Of

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at 600 °C. The microstructure of the PZT thin film was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. The PZT thin film has the epitaxial orientational relationship of (001) [010]PZT ║ (001) [010]SRO ║ (001) [010]STO with the substrate. The remnant (Pr ) and saturation polarization (Ps) density were measured to be Pr ~ 51.4 µC/cm2 and Ps ~ 62.1 µC/cm2 at 5 V, respectively. Ferroelectric fatigue measurements show that the net-switching polarization begins to drop (to 98% of its initial value) after 7 × 108 cycles.

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