scholarly journals Student and School Media as a Form Factor of Teaching Speech Competencies

2021 ◽  
Vol 5 (4) ◽  
pp. 73-76
Author(s):  
Polina A. Ateeva ◽  
◽  
Denis V. Vederko ◽  
Keyword(s):  
Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).


1982 ◽  
Vol 43 (C7) ◽  
pp. C7-273-C7-278 ◽  
Author(s):  
P. Burlet ◽  
J. X. Boucherle ◽  
J. Rossat-Mignod ◽  
J. W. Cable ◽  
W. C. Koehler ◽  
...  

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-263-C7-271 ◽  
Author(s):  
J. X. Boucherle ◽  
D. Ravot ◽  
J. Schweizer
Keyword(s):  

1982 ◽  
Vol 43 (C7) ◽  
pp. C7-253-C7-256
Author(s):  
H. Fuess ◽  
R. Müller ◽  
D. Schwabe ◽  
F. Tasset

Author(s):  
Kendall Scott Wills ◽  
Omar Diaz de Leon ◽  
Kartik Ramanujachar ◽  
Charles P. Todd

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.


2000 ◽  
Vol 89 (1) ◽  
pp. 4
Author(s):  
A. N. Khoperskiı̆
Keyword(s):  

2021 ◽  
Vol 11 (6) ◽  
pp. 2803
Author(s):  
Jae-Woo Kim ◽  
Dong-Seong Kim ◽  
Seung-Hwan Kim ◽  
Sang-Moon Shin

A quad, small form-factor pluggable 28 Gbps optical transceiver design scheme is proposed. It is capable of transmitting 50 Gbps of data up to a distance of 40 km using modulation signals with a level-four pulse-amplitude. The proposed scheme is designed using a combination of electro-absorption-modulated lasers, transmitter optical sub-assembly, low-cost positive-intrinsic-native photodiodes, and receiver optical sub-assembly to achieve standard performance and low cost. Moreover, the hardware and firmware design schemes to implement the optical transceiver are presented. The results confirm the effectiveness of the proposed scheme and the performance of the manufactured optical transceiver, thereby confirming its applicability to real industrial sites.


Author(s):  
Momchil Terziev ◽  
Tahsin Tezdogan ◽  
Yigit Kemal Demirel ◽  
Diego Villa ◽  
Simon Mizzi ◽  
...  
Keyword(s):  

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