On variation of Rate of Growth of Epitaxial Layers by Varia- tion of Substrate Heating

2021 ◽  
Vol 10 (3) ◽  
pp. 189-196
Keyword(s):  
Epitaxial Layers ◽  
Substrate Heating ◽  
Rate Of Growth

Dependence of the rate of growth of epitaxial layers of indium arsenide on the temperature of deposition in the system in As-AsC13-H2

1984 ◽  
Vol 27 (5) ◽  
pp. 379-383 ◽  
Author(s):  
G. A. Aleksandrova ◽  
I. V. Ivonin ◽  
L. M. Krasil'nikova ◽  
L. G. Lavrent'eva ◽  
P. B. Paschenko ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Epitaxial Layers ◽  
Rate Of Growth

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-693-C4-696 ◽  
Author(s):  
J. P. LAURENTI ◽  
P. ROENTGEN ◽  
K. WOLTER ◽  
K. SEIBERT ◽  
H. KURZ ◽  
...  
Keyword(s):  
Epitaxial Layers

Economic Growth: New Problems and New Risks

2006 ◽  
pp. 20-37 ◽  
Author(s):  
M. Ershov
Keyword(s):  
Economic Growth ◽  
Foreign Exchange ◽  
Driving Force ◽  
Structural Changes ◽  
Rate Of Growth

The economic growth, which is underway in Russia, raises new questions to be addressed. How to improve the quality of growth, increasing the role of new competitive sectors and transforming them into the driving force of growth? How can progressive structural changes be implemented without hampering the rate of growth in general? What are the main external and internal risks, which may undermine positive trends of development? The author looks upon financial, monetary and foreign exchange aspects of the problem and comes up with some suggestions on how to make growth more competitive and sustainable.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Some Factors in Growth Reconsidered by Robert Eisner, (Lecture Series No. 21). Athens: Center of Planning and Economic Research, 1966. pp.63.

1967 ◽  
Vol 7 (4) ◽  
pp. 547-547
Author(s):  
Gunnar Floystad
Keyword(s):  
Economic Growth ◽  
Simple Model ◽  
Labour Force ◽  
Economic Research ◽  
Positive Relation ◽  
Employment Level ◽  
Rate Of Growth ◽  
Lecture Series ◽  
Sustained Rate

Eisner's book contains two lectures which were read at the Center of Planning and Economic Research in Athens. In his first lecture the author raises the question: does a higher level of employment contribute to a more rapid, sustained rate of economic growth? A number of economists, including P.A. Samuelson, A.W. Philips and Harry Johnson, have argued that the positive relation between employment and growth is a transitory phenomenon which occurs only when the employment level changes. By using a simple model of the Harrod-Domar type he shows that the higher the level of employment or, more exactly, the higher the proportion of the labour force employed the greater will be the percentage rate of growth of output.

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