Material Analysis of the RFID Tag Isolator for Increasing the Tag Performance

2021 ◽  
Vol 07 (12) ◽  
Keyword(s):  
Rfid Tag ◽  
Author(s):  
J. P. Benedict ◽  
R. M. Anderson ◽  
S. J. Klepeis

Ion mills equipped with flood guns can perform two important functions in material analysis; they can either remove material or deposit material. The ion mill holder shown in Fig. 1 is used to remove material from the polished surface of a sample for further optical inspection or SEM ( Scanning Electron Microscopy ) analysis. The sample is attached to a pohshing stud type SEM mount and placed in the ion mill holder with the polished surface of the sample pointing straight up, as shown in Fig 2. As the holder is rotating in the ion mill, Argon ions from the flood gun are directed down at the top of the sample. The impact of Argon ions against the surface of the sample causes some of the surface material to leave the sample at a material dependent, nonuniform rate. As a result, the polished surface will begin to develop topography during milling as fast sputtering materials leave behind depressions in the polished surface.


2015 ◽  
Vol 6 (4) ◽  
pp. 171-184
Author(s):  
Liangbo Xie ◽  
Jiaxin Liu ◽  
Yao Wang ◽  
Chuan Yin ◽  
Guangjun Wen

2010 ◽  
Vol E93-C (6) ◽  
pp. 785-795
Author(s):  
Sung-Jin KIM ◽  
Minchang CHO ◽  
SeongHwan CHO
Keyword(s):  
Rfid Tag ◽  

Author(s):  
Z.G. Wen ◽  
F.D. Wang ◽  
D.Y. Zhao ◽  
Y.B. Wang
Keyword(s):  
Rfid Tag ◽  

Author(s):  
Weiwei Lin ◽  
Wenhua Zeng ◽  
Chao Li ◽  
Lvqing Yang ◽  
Meihong Wang

Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.


2017 ◽  
Vol 55 (9) ◽  
pp. 835-839
Author(s):  
A. Eriguchi ◽  
H. Hayano ◽  
T. Sato ◽  
Y. Isaka
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document