Development of Minimally Invasive Microneedle Made of Tungsten – Sharpening Through Electrochemical Etching and Hole Processing for Drawing up Liquid Using Excimer Laser –

2013 ◽  
Vol 25 (4) ◽  
pp. 755-761 ◽  
Author(s):  
Takahiro Tanaka ◽  
◽  
Tomokazu Takahashi ◽  
Masato Suzuki ◽  
Seiji Aoyagi

A tungsten needle was fabricated by electrochemically etching a thin wire with a diameter of 100 µm, with the goal of using it in minimally invasive medical treatments. The sharpness and smoothness of the tip were effective for easy insertion because they provided a large stress concentration and small amount of friction, respectively. An experiment involving the insertion of the fabricated needle into artificial skinmade of silicone rubber was carried out. The resistance force during the insertion was greatly reduced because of the small size of the needle, which was comparable to a mosquito’s proboscis. Despite the ultra-thin shape, the microneedle neither buckled nor broke because of the high hardness of the tungsten material. A hole was fabricated in the tungsten needle using excimer laser processing and electrochemical etching. Water and blood sampling were successfully achieved using this needle.

2010 ◽  
Vol 97 (1) ◽  
pp. 014102 ◽  
Author(s):  
J. C. Conde ◽  
E. Martín ◽  
S. Chiussi ◽  
F. Gontad ◽  
C. Serra ◽  
...  

1994 ◽  
Vol 9 (3) ◽  
pp. 415-427 ◽  
Author(s):  
A. Fontes ◽  
M. Jeandin ◽  
Olivier Uteza ◽  
Marc Sentis ◽  
Michel Frainais

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.


2016 ◽  
Vol 362 ◽  
pp. 217-220 ◽  
Author(s):  
F. Gontad ◽  
J.C. Conde ◽  
S. Chiussi ◽  
C. Serra ◽  
P. González

1995 ◽  
Author(s):  
Karsten Schutte ◽  
Emil Schubert ◽  
Hans W. Bergmann

1994 ◽  
Vol 2 (2) ◽  
pp. 319-325 ◽  
Author(s):  
R. Černý ◽  
V. Vydra ◽  
K.M.A. El-Kader ◽  
V. Cháb

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