Survei keberagaman lumut dan pohon inang di kawasan Kebun Raya Bogor

Alfira Lestiani; Retno Sri Dewi Lestari; Rinjani Ayu Rizkia; Asri Mutia Pratiwi; Eka Putri Azrai; Daniar Setyo Rini

doi:10.21009/pbe.4-1.5

Survei keberagaman lumut dan pohon inang di kawasan Kebun Raya Bogor

Proceeding of Biology Education ◽

10.21009/pbe.4-1.5 ◽

2021 ◽

Vol 4 (1) ◽

pp. 51-62

Author(s):

Alfira Lestiani ◽

Retno Sri Dewi Lestari ◽

Rinjani Ayu Rizkia ◽

Asri Mutia Pratiwi ◽

Eka Putri Azrai ◽

...

Keyword(s):

Ex Situ

Lumut (Bryophyta) adalah kelompok tumbuhan tingkat rendah. Lumut memiliki peran yang sangat penting bagi ekosistem yaitu untuk menjaga sirkulasi hara, keseimbangan air, menjadi habitat penting bagi organisme lain, dan dapat digunakan sebagai indikator biologis lingkungan. Lumut hidup menempel pada berbagai macam substrat diantaranya batu, pohon, kayu, dan tanah. Kebun Raya Bogor merupakan kawasan konservasi ex situ dan merupakan representasi kekayaan tumbuhan Indonesia, salah satunya adalah lumut. Terdapat banyak tumbuhan tingkat tinggi di Kebun Raya Bogor yang berpotensi menjadi tempat hidup dan basis tumbuh kembang lumut. Penelitian ini bertujuan untuk mengetahui keanekaragaman jenis lumut dan substratnya di Kebun Raya Bogor. Penelitian ini dilaksanakan pada 25 November 2020. Pengambilan data dilakukan dengan mengindentifikasi spesies tanaman Lumut beserta pohon inangnya di sepanjang jalan Kenari di Kebun Raya Bogor. Penelitian ini menggunakan metode survei eksploratif dengan teknik sampling menggunakan kuadrat. Hasil penelitian dapat diketahui bahwa Jumlah total spesies lumut yang ditemukan pada 7 pohon inang adalah 11 spesies yang dapat diidentifikasi yaitu Isopterygium sp., Lejeunea sp., Ectropothecium sp., Barbula unguiculata, Neckeropsis sp., Cirriphyllum piliferum, Radula javanica, Lopholejeunea sp., Symphyogyna sp., Sphagnum sp., dan Taxiphullum sp.. Jenis lumut yang paling banyak ditemukan di pohon (substrat) sekitar jalan Kenari Kebun Raya Bogor adalah jenis Lejeuneae sp.

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An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010648x ◽

1988 ◽

Vol 46 ◽

pp. 884-885

Author(s):

D. Loretto ◽

J. M. Gibson ◽

S. M. Yalisove ◽

R. T. Tung

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Defect Density ◽

High Vacuum ◽

Ultra High Vacuum ◽

Ex Situ ◽

Metal Base ◽

In Situ Experiments ◽

Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100150046 ◽

1993 ◽

Vol 51 ◽

pp. 842-843

Author(s):

K. Barmak

Keyword(s):

Thin Film ◽

Thin Films ◽

Phase Transformations ◽

Analytical Electron Microscopy ◽

Ex Situ ◽

Multilayer Thin Films ◽

Absolute Concentration ◽

Analytical Electron ◽

Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

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Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154287 ◽

1989 ◽

Vol 47 ◽

pp. 462-463

Author(s):

D. Loretto ◽

J. M. Gibson ◽

S. M. Yalisove

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electron Diffraction ◽

High Vacuum ◽

High Energy ◽

Energy Electron ◽

Ultra High Vacuum ◽

Ex Situ ◽

Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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Interfacial properties of GaSb/InAs superlattices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100149969 ◽

1993 ◽

Vol 51 ◽

pp. 826-827

Author(s):

M. E. Twigg ◽

B. R. Bennett ◽

J. R. Waterman ◽

J. L. Davis ◽

B. V. Shanabrook ◽

...

Keyword(s):

Gaas Substrate ◽

Molecular Beam ◽

Infrared Detector ◽

Interfacial Properties ◽

Ex Situ ◽

X Ray Diffraction ◽

Absorption Coefficients ◽

X Ray ◽

Short Period ◽

High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

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