Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates

2011 ◽  
Vol 520 (2) ◽  
pp. 828-832 ◽  
Author(s):  
Sheng-Wang Yu ◽  
Peng-Wei Fan ◽  
Wei-Zhong Tang ◽  
Xiao-Jing Li ◽  
Hao-Lin Hu ◽  
...  
Keyword(s):  
Phase Composition ◽  
Chemical Vapor Deposition ◽  
Pressure Dependence ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Cemented Carbide ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Films

Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition

2002 ◽  
Vol 742 ◽  
Author(s):  
Mitsuo Okamoto ◽  
Ryoji Kosugi ◽  
Shinichi Nakashima ◽  
Kenji Fukuda ◽  
Kazuo Arai
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Plasma Chemical ◽  
Step Bunching ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Films

ABSTRACTHomoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000°C on 4H-SiC of Si-face and C-face by microwave plasma chemical vapor deposition method. The extent of step-bunching of those films grown on C-face was low in comparison with that on Si-face, although large and irregular shaped step-bunching was occurred in both films grown on Si-face and C-face. For the first step to application for the electrical devices, the electrical properties of the μPCVD grown films was characterized by fabricating simple pn-junction structure. The obtained SiC films indicated n-type conductivity and the amount of background donor impurities of the films grown on C-face substrates were lower by one order than that on Si-face.

Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

2008 ◽  
Vol 47 (4) ◽  
pp. 3050-3052
Author(s):  
Masataka Moriya ◽  
Yuji Matsumoto ◽  
Yoshinao Mizugaki ◽  
Tadayuki Kobayashi ◽  
Kouichi Usami
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Organized

Crystalline carbon nitride thin films deposited by microwave plasma chemical vapor deposition

2000 ◽  
Vol 9 (7) ◽  
pp. 545-549
Author(s):  
Zhang Yong-ping ◽  
Gu You-song ◽  
Chang Xiang-rong ◽  
Tian Zhong-zhuo ◽  
Shi Dong-xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Lateral outward growth of single-crystal diamond by two different structures of microwave plasma reactors

CrystEngComm ◽  
2022 ◽  
Author(s):  
Wei Cao ◽  
Zhibin Ma ◽  
Hongyang Zhao ◽  
Deng Gao ◽  
Qiuming Fu
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Lateral Growth ◽  
Plasma Reactors ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

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