scholarly journals Effect of Diffusion Temperature on the some Electrical Properties of CdS:In Thin Films Prepared by Vacuum Evaporation

2017 ◽  
Vol 14 (4) ◽  
pp. 793-796
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Diffusion Method ◽  
Thermal Evaporation Technique ◽  
Glass Substrates ◽  
Thermal Diffusion Method ◽  
Diffusion Temperature ◽  
Evaporation Technique

CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.

scholarly journals Effect of Annealing Temperature on The Some Electrical Properties of InSb:Bi Thin Films

2010 ◽  
Vol 7 (4) ◽  
pp. 1416-1420
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Carrier Concentration ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Evaporation Technique

InSb alloy was prepared then InSb:Bi films have been prepared successfully by thermal evaporation technique on glass substrate at Ts=423K. The variation of activation energies(Ea1,Ea2)of d.c conductivity with annealing temperature (303, 373, 423, 473, 523 and 573)K were measured, it is found that its values increases with increasing annealing temperature. To show the type of the films, the Hall and thermoelectric power were measured. The activation energy of the thermoelectric power is much smaller than for d.c conductivity and increases with increasing annealing temperature .The mobility and carrier concentration has been measured also.

scholarly journals MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF CDSE THIN FILMS PREPARED BY THERMAL EVAPORATION TECHNIQUE

2021 ◽  
Vol 03 (01) ◽  
pp. 39-44
Author(s):  
Asmaa Natiq Mohammed ALI
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Mean Free Path ◽  
Thermal Evaporation Technique ◽  
Annealing Temperatures ◽  
Average Grain Size ◽  
Evaporation Technique ◽  
Different Thickness

In this work , CdSe thin films with different thickness (100 and 200) nm have been prepared at RT by thermal evaporation technique on glass substrate under vacuum of 10-5 mbar. These films have been annealed to different annealing temperatures (423,473 and523) K. The morphology structure of the films has been examined using atomic force microscope (AFM) analysis. AFM measurements showed that the average grain size values of CdSe thin films decrease with increasing of annealing temperatures from (RT-523K). While the average grain size values increase with increasing thickness. The electrical properties of these films were studied with different thickness and annealing temperature. The d.c. conductivity for all deposited films decreases with increases of annealing temperatures. The electrical activation energies Ea1 and Ea2 found to decrease with increasing of thicknesses. While increase with increasing of annealing temperatures. From Hall effect result, it is found that the carriers concentration increase with increasing of annealing temperatures. While decrease with increasing of thickness. Hall mobility, drift velocity, carrier life time and mean free path decrease with increasing of thickness and annealing temperatures

scholarly journals Study the influence of Annealing upon electrical properties of The prepared films ZnSe by Thermal evaporation in Vacuum

2004 ◽  
Vol 1 (2) ◽  
pp. 253-257
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Glass Substrates ◽  
Before And After ◽  
Result Show ◽  
Different Thickness

Thin films of ZnSe arc deposited on glass substrates by thermal evaporation in vacuum with different thickness (1000, 2700, 4000) A° temperature (293-373) °K are studies the electrical properties before and after annealing. The result show decrease D.0 conductivity and increasing the activation energy Eat.

scholarly journals Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

2020 ◽  
Vol 21 (1) ◽  
pp. 8
Author(s):  
Emy Mulyani ◽  
Tjipto Sujitno ◽  
Dessy Purbandari ◽  
Ferdiansjah Ferdiansjah ◽  
Sayono Sayono
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Glass Substrate ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Thermal Evaporation Technique ◽  
Optimal Thickness ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Deposition Depth

This paper presents the research on the growth of ZnS:Ag:Cu thin film on a glass substrate as a radio-luminescent material. The SRIM/TRIM software is used to determine the optimum thickness based on an energy deposition depth of 5.485 MeV Am 241 alpha radiation source on ZnS:Ag:Cu material. To increase the adhesive strength of the coating, initially, the glass substrate is etched using a plasma glow discharged at 280°C for 15 minutes. Multiple coatings of ZnS:Ag:Cu were  etched on the glass substrate; this was carried out using a thermal evaporation technique to achieve the optimal thickness (based on SRIM/TRIM simulation). The thin film thickness was observed using a scanning electron microscope (SEM). The optical properties of the un-etched, etched glass substrate and thin-film were characterized using UV-Vis spectrometer. Based on SRIM/TRIM simulation, the optimal thickness is 22 mm which can be achieved by coating three times. From optical properties of ZnS:Ag:Cu thin film and after being analysed using Taue plot method, it is found that the energy gap of ZnS:Ag:Cu thin film is 2.48 eV. It can be concluded that the addition of Ag and Cu doped decrease the energy gap of ZnS (3.66 eV).

Ellipsometric analysis of Cd1−xZnxSe thin films prepared by a thermal evaporation technique

2011 ◽  
Vol 83 (6) ◽  
pp. 065706 ◽  
Author(s):  
Arshad Mahmood ◽  
Shaista R ◽  
A Shah ◽  
U Aziz ◽  
E Ahmed ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Evaporation Technique
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