Post annealing effects on structural, optical and electrical properties of CuSbS2 thin films fabricated by combinatorial thermal evaporation technique

2016 ◽  
Vol 89 ◽  
pp. 136-144 ◽  
Author(s):  
Arshad Hussain ◽  
R. Ahmed ◽  
N. Ali ◽  
Faheem K. Butt ◽  
A. Shaari ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Optical And Electrical Properties ◽  
Thermal Evaporation Technique ◽  
Post Annealing ◽  
Annealing Effects ◽  
Evaporation Technique

scholarly journals MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF CDSE THIN FILMS PREPARED BY THERMAL EVAPORATION TECHNIQUE

2021 ◽  
Vol 03 (01) ◽  
pp. 39-44
Author(s):  
Asmaa Natiq Mohammed ALI
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Mean Free Path ◽  
Thermal Evaporation Technique ◽  
Annealing Temperatures ◽  
Average Grain Size ◽  
Evaporation Technique ◽  
Different Thickness

In this work , CdSe thin films with different thickness (100 and 200) nm have been prepared at RT by thermal evaporation technique on glass substrate under vacuum of 10-5 mbar. These films have been annealed to different annealing temperatures (423,473 and523) K. The morphology structure of the films has been examined using atomic force microscope (AFM) analysis. AFM measurements showed that the average grain size values of CdSe thin films decrease with increasing of annealing temperatures from (RT-523K). While the average grain size values increase with increasing thickness. The electrical properties of these films were studied with different thickness and annealing temperature. The d.c. conductivity for all deposited films decreases with increases of annealing temperatures. The electrical activation energies Ea1 and Ea2 found to decrease with increasing of thicknesses. While increase with increasing of annealing temperatures. From Hall effect result, it is found that the carriers concentration increase with increasing of annealing temperatures. While decrease with increasing of thickness. Hall mobility, drift velocity, carrier life time and mean free path decrease with increasing of thickness and annealing temperatures

scholarly journals Effect of Diffusion Temperature on the some Electrical Properties of CdS:In Thin Films Prepared by Vacuum Evaporation

2017 ◽  
Vol 14 (4) ◽  
pp. 793-796
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Diffusion Method ◽  
Thermal Evaporation Technique ◽  
Glass Substrates ◽  
Thermal Diffusion Method ◽  
Diffusion Temperature ◽  
Evaporation Technique

CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.

scholarly journals Effect of Annealing Temperature on The Some Electrical Properties of InSb:Bi Thin Films

2010 ◽  
Vol 7 (4) ◽  
pp. 1416-1420
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Carrier Concentration ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Evaporation Technique

InSb alloy was prepared then InSb:Bi films have been prepared successfully by thermal evaporation technique on glass substrate at Ts=423K. The variation of activation energies(Ea1,Ea2)of d.c conductivity with annealing temperature (303, 373, 423, 473, 523 and 573)K were measured, it is found that its values increases with increasing annealing temperature. To show the type of the films, the Hall and thermoelectric power were measured. The activation energy of the thermoelectric power is much smaller than for d.c conductivity and increases with increasing annealing temperature .The mobility and carrier concentration has been measured also.

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