Study of some structural , optical , Electrical Properties of CdS thin films deposited by chemical Spray Pyrolysis Method

In this research we prepared CdS thin films by Spray pyrolysis method on a glass substrates and we study its structural , optical , electrical properties .The result of (X-Ray ) diffraction showed that all thin films have a polycrystalline structure , The relation of the transmission as a function of wavelength for the CdS films had been studied , The investigated of direct energy gap of the CdS its value is (2.83 eV). In Hall effect measurement of the CdS we find the charge carriers is p – type and Hall coefficient 1157.33(cm3/c) ,Hall mobility 6.77(cm2/v.s)

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Preparation and study of the structural and optical properties of Bi2S3 thin films by Spray pyrolysis method

Baghdad Science Journal ◽

10.21123/bsj.14.1.75-79 ◽

2017 ◽

Vol 14 (1) ◽

pp. 75-79

Author(s):

Baghdad Science Journal

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spray Pyrolysis ◽

Energy Gap ◽

Visible Spectrum ◽

Spray Pyrolysis Method ◽

Chemical Spray Pyrolysis ◽

Structural And Optical Properties ◽

Optical Energy Gap ◽

Pyrolysis Method

In this research Bi2S3 thin films have been prepared on glass substrates using chemical spray pyrolysis method at substrate temperature (300oC) and molarity (0.015) mol. Structural and optical properties of the thin films above have been studied; XRD analysis demonstrated that the Bi2S3 films are polycrystalline with (031) orientation and with Orthorhombic structure. The optical properties were studied using the spectral of the absorbance and transmission of films in wavelength ranging (300-1100) nm. The study showed that the films have high transmission within the range of the visible spectrum. Also absorption coefficient, extinction coefficient and the optical energy gap (Eg) was calculated, found that the film have direct energy gap equal to 2.8 eV.

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ChemInform Abstract: Structural, Optical and Electrical Properties of In-Doped Cd2SnO4 Thin Films by Spray Pyrolysis Method.

ChemInform ◽

10.1002/chin.201117005 ◽

2011 ◽

Vol 42 (17) ◽

pp. no-no

Author(s):

R. Kumaravel ◽

K. Ramamurthi

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Spray Pyrolysis ◽

Spray Pyrolysis Method ◽

Optical And Electrical Properties ◽

Pyrolysis Method

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Optoelectronic Properties of Fluorine and Cobalt Co-Doped Tin Oxide Thin Films Deposited by Chemical Spray Pyrolysis

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.60.63 ◽

2019 ◽

Vol 60 ◽

pp. 63-75 ◽

Cited By ~ 4

Author(s):

Naoual Houaidji ◽

Mejda Ajili ◽

Baghdadi Chouial ◽

Najoua Turki Kamoun ◽

Kenza Kamli ◽

...

Keyword(s):

Thin Films ◽

Spray Pyrolysis ◽

Carrier Concentration ◽

Tin Oxide ◽

Hall Mobility ◽

Spray Pyrolysis Method ◽

Chemical Spray Pyrolysis ◽

Glass Substrates ◽

Chemical Spray ◽

Co Doped

Transparent conducting Cobalt-fluorine co-doped tin oxide (SnO2: (Co, F)) thin filmswere deposited onto preheated glass substrates using the chemical spray pyrolysis method. The ([Co2+]/[Sn4+]) atomic concentration ratio (y)in the spray solution was varied between 0 and 5 at. %. The structural, electrical, optical and photoluminescence properties of these films were studied. It is found that the thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of the deposited thin films. The electrical resistivity (ρ), volume carrier concentration density (Nv), surface carrier concentration density (Ns) and Hall mobility (μ) of the synthesized thin films were determined from the Hall Effect measurements in the Van der Paw-configuration and the following results were obtained: n-type conductivity in all deposited films, a low resistivity of 1.16×10-2 Ω.cm, and a high Hall mobility of 15.13×102 cm2.V-1.s-1with Co concentration equals to 3 at. %. These results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contact in photovoltaic application devices.

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