The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF3 is required. F3NO is considered a potential replacement to NF3. In this study, the characteristics and cleaning performance of the F3NO plasma to replace the greenhouse gas NF3 were examined. Etching of SiO2 thin films was performed, the DC offset of the plasma of both gases (i.e., NF3 and F3NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F3NO plasma were studied, and the SiO2 etch rates of the NF3 and F3NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F3NO plasma was demonstrated, and the potential benefit of replacing NF3 with F3NO was confirmed.
Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer