scholarly journals High mobility transparent and conducting oxide films of La-doped SrSnO3

2021 ◽  
Author(s):  
Yogesh Kumar ◽  
Ravi Kumar ◽  
K Asokan ◽  
R J Choudhary ◽  
D M Phase ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
High Mobility ◽  
X Ray ◽  
Carrier Effective Mass ◽  
Heterostructure Devices ◽  
X Ray Absorption ◽  
La Doped

Abstract The synthesis and characterization of high mobility thin films of La-doped SrSnO 3 are reported. The mobility for the 7% La-doped sample is found to be 228 cm 2 V -1 s -1 . The observed high mobility is associated with the reduced carrier effective mass and scattering centers of various scattering mechanisms. The enhancement in mobility and the increase in carrier concentration after doping reduced the resistivities of the thin films by 5 orders of magnitude. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy revealed that La-dopant and oxygen vacancies donate the electrons in the films. Films were highly transparent (> 90%) in the visible region. These materials have great potential to be used in the optoelectronic and heterostructure devices.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition

2006 ◽  
Vol 321-323 ◽  
pp. 1687-1690 ◽  
Author(s):  
Hee Joon Kim ◽  
Dong Young Jang ◽  
Prem Kumar Shishodia ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray ◽  
Crystalline Films

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

The Control of Electronic States Spreading Outside the Conjugated Polymer Surface

2006 ◽  
Vol 965 ◽  
Author(s):  
Xiao Tao Hao ◽  
Takuya Hosokai ◽  
Noritaka Mitsuo ◽  
Satoshi Kera ◽  
Kazuyuki Sakamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Electronic Structures ◽  
Conjugated Polymer ◽  
Polymer Surface ◽  
Electronic States ◽  
Penning Ionization ◽  
X Ray ◽  
Molecular Ordering ◽  
X Ray Absorption

ABSTRACTThe surface electronic structures of conjugated regio regular and regio random poly (3- hexylthiophene) (rr-P3HT and rra-P3HT) thin films were studied by near edge X-ray absorption fine structure spectroscopy, ultraviolet photoelectron spectroscopy and Penning ionization electron spectroscopy (PIES). The distribution of the surface electronic states was controlled on rr-P3HT and rra-P3HT thin films with different molecular ordering by varying the coating process and PIES was adopted to observe the electronic states existing outside the surface.

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