scholarly journals Structural and optical properties of Cr doped AlN thin films before and after ions implantation

Author(s):  
Asmat Ullah Asmat ◽  
Muhammad Usman ◽  
Altaf Hussain Shar

Abstract Thin films of Chromium (Cr) doped Aluminum Nitride (AlN) have been prepared by radio frequency magnetron sputtering technique at room temperature and pressure conditions in a Nitrogen (N) atmosphere. One of the samples was left as-deposited and the other was irradiated with proton at a fluence of 1x1014 ions/cm2 at a dose of 335 keV. The impact of ions doping on the structural and optical characteristics were investigated systematically. RBS and XRD were utilized to study the stoichiometry, thickness and structural information of the thin films respectively. FTIR was utilized to understand the bonding chemistry of the specimens. We concluded that the optical properties of the thin films have been changed selectively with irradiation leaving by structural unaltered.

2019 ◽  
Vol 33 (05) ◽  
pp. 1950024 ◽  
Author(s):  
Fatma Meydaneri Tezel ◽  
İ. Afşin Kariper

In this study, zinc selenide (ZnSe) thin films were produced on glass substrate by using chemical bath deposition (CBD) method at 80[Formula: see text]C, from aqueous solutions of zinc sulphate and sodium selenosulphide, which were produced using solid selenium as the selenium source. The optical and structural properties of ZnSe thin films were investigated at room-temperature. The pH of the chemical bath, in which ZnSe thin films were immersed, were changed between pH:8–11. Optical properties of the films, including extinction coefficient, refractive index, reflectance, absorbance, transmittance, dielectric constants and optical density values were calculated using absorbance and transmittance measurements determined using a Hach Lange 500 spectrophotometer, in 300–1100 nm wavelength range. Optical bandgap values were obtained from transmittance and absorbance spectra ranged between 2.12 and 2.49 eV. According to XRD results, it was found that the films have polycrystalline structure and they exhibited different film thicknesses depending on phase and pH changes.


CrystEngComm ◽  
2018 ◽  
Vol 20 (1) ◽  
pp. 133-139 ◽  
Author(s):  
Yikai Liao ◽  
Shujie Jiao ◽  
Shaofang Li ◽  
Jinzhong Wang ◽  
Dongbo Wang ◽  
...  

β-Ga2O3films have been obtained by thermal annealing of amorphous thin films that were deposited by radio frequency magnetron sputtering.


2011 ◽  
Vol 33 (7) ◽  
pp. 1055-1058 ◽  
Author(s):  
M.J. Soares ◽  
J.P. Leitão ◽  
M.I.N. da Silva ◽  
J.C. González ◽  
F.M. Matinaga ◽  
...  

2005 ◽  
Vol 891 ◽  
Author(s):  
Kousik Samanta ◽  
Pijush Bhattacharya ◽  
Ram S. Katiyar ◽  
W. Iwamoto ◽  
R. R. Urbano ◽  
...  

ABSTRACTThin films of Co substituted ZnO and ZnCo2O4 were deposited on c-axis (0001) oriented Al2O3 substrates using pulsed laser deposition. The XRD results showed all the films were highly (002) oriented with a less intense peak of (311) for ZnCo2O4 thin film. Micro-Raman spectra of ceramic targets showed the modes related to wurtzite ZnO and spinel ZnCo2O4 structures. In thin films of Zn1−xCoxO no modes corresponding to ZnCo2O4 were detected. The intensity of E1(LO) and multiphonon peak at 584 and 540 cm−1 respectively, increased with increase in Co substitution. The optical absorption of the films showed that the band gap decreased with increase of Co concentrations at room temperature along with the sub-bandgap absorptions due to d-d transitions of Co2+. Similar sub-bandgap d-d transition was also observed in the absorption spectra ZnCo2O4 thin films. The highest saturated magnetization (0.2μB/Co) was obtained for 5%Co substituted ZnO.


Sign in / Sign up

Export Citation Format

Share Document