MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices

1987 ◽  
Author(s):  
Jean-Pierre Faurie
Keyword(s):  
Electronic Device ◽  
Mbe Growth ◽  
Growth Characterization ◽  
Device Processing

Influence of Gate Material and Process on Junctionless FET Subthreshold Performance

2016 ◽  
Vol 6 (2) ◽  
pp. 895
Author(s):  
Munawar A Riyadi ◽  
Irawan D Sukawati ◽  
Teguh Prakoso ◽  
Darjat Darjat
Keyword(s):  
Recent Progress ◽  
Electronic Device ◽  
Threshold Value ◽  
The Other ◽  
Subthreshold Slope ◽  
New Device ◽  
Nano Scale ◽  
Device Processing ◽  
Alternative Materials

The recent progress of dimension scaling of electronic device into nano scale has motivated the invention of alternative materials and structures. One new device that shows great potential to prolong the scaling is junctionless FET (JLFET). In contrast to conventional MOSFETs, JLFET does not require steep junction for source and drain. The device processing directly influence the performance, therefore it is crucial to understand the role of gate processing in JLFET. This paper investigates the influence of gate material and process on subthreshold performance of junctionless FET, by comparing four sets of gate properties and process techniques. The result shows that in terms of subthreshold slope, JLFET approaches near ideal value of 60 mV/decade, which is superior than the SOI FET for similar doping rate. On the other hand, the threshold value shows different tendencies between those types of device.

MBE growth and device processing of MWIR HgCdTe on large area Si substrates

2001 ◽  
Vol 30 (6) ◽  
pp. 717-722 ◽  
Author(s):  
G. Brill ◽  
S. Velicu ◽  
P. Boieriu ◽  
Y. Chen ◽  
N. K. Dhar ◽  
...  
Keyword(s):  
Large Area ◽  
Mbe Growth ◽  
Si Substrates ◽  
Device Processing

scholarly journals Influence of Gate Material and Process on Junctionless FET Subthreshold Performance

2016 ◽  
Vol 6 (2) ◽  
pp. 895
Author(s):  
Munawar A Riyadi ◽  
Irawan D Sukawati ◽  
Teguh Prakoso ◽  
Darjat Darjat
Keyword(s):  
Recent Progress ◽  
Electronic Device ◽  
Threshold Value ◽  
The Other ◽  
Subthreshold Slope ◽  
New Device ◽  
Nano Scale ◽  
Device Processing ◽  
Alternative Materials

The recent progress of dimension scaling of electronic device into nano scale has motivated the invention of alternative materials and structures. One new device that shows great potential to prolong the scaling is junctionless FET (JLFET). In contrast to conventional MOSFETs, JLFET does not require steep junction for source and drain. The device processing directly influence the performance, therefore it is crucial to understand the role of gate processing in JLFET. This paper investigates the influence of gate material and process on subthreshold performance of junctionless FET, by comparing four sets of gate properties and process techniques. The result shows that in terms of subthreshold slope, JLFET approaches near ideal value of 60 mV/decade, which is superior than the SOI FET for similar doping rate. On the other hand, the threshold value shows different tendencies between those types of device.

Structure determination of MBE-grown GaAs(001)-2×4 surfaces by quantitative RHEED analyses

1993 ◽  
Vol 51 ◽  
pp. 1008-1009
Author(s):  
Y. Ma ◽  
S. Lordi ◽  
J. A. Eades
Keyword(s):  
Gallium Arsenide ◽  
Surface Structure ◽  
Structure Determination ◽  
Electronic Device ◽  
Mbe Growth ◽  
X Ray ◽  
Device Structures ◽  
Structure Determinations ◽  
Quantitative Analyses

The GaAs(001) surface is the most widely used gallium arsenide face in the MBE growth of multilayer electronic device structures. Various reconstructions on this face have been reported. They range from the As-rich (2×4) to the Ga-rich (4×2). The As-rich (2×4) surface is the most important one of these, since MBE growth usually starts and ends with this surface. A multislice formalism of Cowley & Moodie with a recently developed edge patching method has been applied to quantitative analyses of the RHEED patterns from MBE grown GaAs(001)-2×4 surfaces. The analyses are based on the ordering of visually estimated spot intensities of the observed RHEED patterns from the GaAs(001)-2×4 surfaces, which is similar to the approach used in early X-ray structure determinations. The surface structure has been proved to be a dimerized vacant 2×4 reconstruction with one dimer of every four missing, which is consistent with previous STM observations.

A Critical Comparison Between Movpe and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications

1998 ◽  
Vol 537 ◽  
Author(s):  
M.A.L. Johnson ◽  
Zhonghai Yu ◽  
J.D. Brown ◽  
F.A. Koeck ◽  
N.A. El-Masry ◽  
...  
Keyword(s):  
Electronic Device ◽  
Light Emitting Diode ◽  
Rf Plasma ◽  
Nitrogen Species ◽  
Active Nitrogen ◽  
Mbe Growth ◽  
Light Emitting ◽  
Device Applications ◽  
Materials Used ◽  
P Type

AbstractA systematic study of the growth and doping of GaN, AlGaN, and InGaN by both molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) has been performed. Critical differences between the resulting epitaxy are observed in the p-type doping using magnesium as the acceptor species. MBE growth, using rf-plasma sources to generate the active nitrogen species for growth, has been used for III-Nitride compounds doped either n-type with silicon or p-type with magnesium. Blue and violet light emitting diode (LED) test structures were fabricated. These vertical devices required a relatively high forward current and exhibited high leakage currents. This behavior was attributed to parallel shorting mechanisms along the dislocations in MBE grown layers. For comparison, similar devices were fabricated using a single wafer vertical flow MOVPE reactor and ammonia as the active nitrogen species. MOVPE grown blue LEDs exhibited excellent forward device characteristics and a high reverse breakdown voltage. We feel that the excess hydrogen, which is present on the GaN surface due to the dissociation of ammonia in MOVPE, acts to passivate the dislocations and eliminate parallel shorting for vertical device structures. These findings support the widespread acceptance of MOVPE, rather than MBE, as the epitaxial growth technique of choice for III-V nitride materials used in vertical transport bipolar devices for optoelectronic applications.

MBE-growth, characterization and properties of InN and InGaN

2003 ◽  
Vol 200 (1) ◽  
pp. 202-208 ◽  
Author(s):  
Y. Nanishi ◽  
Y. Saito ◽  
T. Yamaguchi ◽  
M. Hori ◽  
F. Matsuda ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Growth Characterization

The Growth, Characterization and Electronic Device Applications of GaAs/Si

1989 ◽  
Vol 145 ◽  
Author(s):  
A. S. Jordan ◽  
S. J. Pearton ◽  
W. S. Hobson
Keyword(s):  
Electronic Device ◽  
Bulk Gaas ◽  
Selective Area ◽  
Growth Characterization ◽  
Unintentional Doping ◽  
Dislocation Densities ◽  
Device Applications ◽  
Mismatched Heteroepitaxy ◽  
Processing Techniques

AbstractWe review the growth of GaAs on Si by MO-CVD and MBE and discuss the relative merits of these techniques. Major emphasis is placed on the structural and optical characterization of the material that may be indicative of device performance. Typical GaAs layers on Si are free of anti- phase domains and the crystallinity at the surface for a 3-4μm thick deposit approaches that of bulk GaAs, as evidenced by the RBS backscattering yields and Si ion implantation profiles. The major drawbacks of GaAs heteroepitaxy on Si are the very large dislocation densities (106- 109cm−2), the relatively high unintentional doping concentration (>5 × 1014cm−3) that is partly attributable to Si outdiffusion, and the excessive bowing due to thermal expansion coefficient mismatch. While there are growth and processing techniques to overcome bowing or at least its influence, dislocations and low resistivity are hard to remedy. We discuss novel schemes to reduce dislocations (selective area growth, superlattices and thermal cycling) and efforts to improve the electrical properties (doping, optimization of V/III ratio). A variety of electronic devices and circuits have been fabricated using GaAs/Si. We shall present results on MESFETs, HBTs and HFETs processed in our laboratory and elsewhere. It is quite encouraging that HFETs with a transconductance of 220mS/mm are achievable. However, lasers in room temperature CW operation still have a very limited lifetime. Finally, we discuss the implications of GaAs/Si for a broader area of mismatched heteroepitaxy (InP/Si, InP/GaAs, etc.) and speculate on the future prospects for this new materials technology.

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