MBE growth and device processing of MWIR HgCdTe on large area Si substrates

2001 ◽  
Vol 30 (6) ◽  
pp. 717-722 ◽  
Author(s):  
G. Brill ◽  
S. Velicu ◽  
P. Boieriu ◽  
Y. Chen ◽  
N. K. Dhar ◽  
...  
Keyword(s):  
Large Area ◽  
Mbe Growth ◽  
Si Substrates ◽  
Device Processing

Epitaxial Growth of CdTe on (100) GaAs/Si and (111) GaAs/Si Substrates Using Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition

1987 ◽  
Vol 102 ◽  
Author(s):  
G. Radhakrishnan ◽  
A. Nouhi ◽  
J. Katz
Keyword(s):  
Single Crystal ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Large Area ◽  
Lattice Match ◽  
Si Substrates ◽  
Device Processing ◽  
Metalorganic Chemical

CdTe is a very important semiconductor with versatile applications extending from solar energy conversion to optoelectronics. In addition, both the close lattice match between CdTe and HgCdTe and the immunity of CdTe to autodoping of the HgCdTe make CdTe the substrate of choice for the growth of HgCdTe. However, CdTe is extremely difficult to grow and the nonavailability of good quality, large area, inexpensive, single crystal CdTe has slowed the development of HgCdTe detectors. Infrared device processing requires large areas of single crystal material and the problems associated with CdTe have called for alternative substrates for growing HgCdTe.

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

Large-area epitaxial CdTe(100) films grown on GaAs(100) substrates: MBE growth and substrate temperature effect

2021 ◽  
Author(s):  
Younghun Hwang ◽  
Van Quang Ngugen ◽  
Jin San Choi ◽  
Sujung Park ◽  
Shinuk Cho ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Temperature Effect ◽  
Large Area ◽  
Mbe Growth

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

2020 ◽  
Vol 1004 ◽  
pp. 725-730
Author(s):  
Fabrizio Roccaforte ◽  
Monia Spera ◽  
Salvatore Di Franco ◽  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Current Transport ◽  
Large Area ◽  
Si Substrates ◽  
Ohmic Behavior ◽  
Specific Contact ◽  
Thermionic Field Emission

Gallium nitride (GaN) and its AlGaN/GaN heterostructures grown on large area Si substrates are promising systems to fabricate power devices inside the existing Si CMOS lines. For this purpose, however, Au-free metallizations are required to avoid cross contaminations. In this paper, the mechanisms of current transport in Au-free metallization on AlGaN/GaN heterostructures are studied, with a focus on non-recessed Ti/Al/Ti Ohmic contacts. In particular, an Ohmic behavior of Ti/Al/Ti stacks was observed after an annealing at moderate temperature (600°C). The values of the specific contact resistance ρc decreased from 1.6×104 Ω.cm2 to 7×105 Ω.cm2 with increasing the annealing time from 60 to 180s. The temperature dependence of ρc indicated that the current flow is ruled by a thermionic field emission (TFE) mechanism, with barrier height values of 0.58 eV and 0.52 eV, respectively. Finally, preliminary results on the forward and reverse bias characterization of Au-free tungsten carbide (WC) Schottky contacts are presented. This contact exhibited a barrier height value of 0.82 eV.

Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

2012 ◽  
Vol 1433 ◽  
Author(s):  
A. Severino ◽  
M. Mauceri ◽  
R. Anzalone ◽  
A. Canino ◽  
N. Piluso ◽  
...  
Keyword(s):  
Growth Parameters ◽  
Low Cost ◽  
Electronic Devices ◽  
Young Modulus ◽  
Interesting Property ◽  
Large Area ◽  
Si Substrates ◽  
Application Fields ◽  
Sic Films

ABSTRACT3C-SiC is very attractive due the chance to be grown on large-area, low-cost Si substrates. Moreover, 3C-SiC has higher channel electron mobility with respect to 4H-SiC, interesting property in MOSFET applications. Other application fields where 3C-SiC can play a significant role are solar cells and MEMS-based sensors. In this work, we present a general overview of 3C-SiC growth on Si substrate. The influence of growth parameters, such as the growth rate, on the crystal quality of 3C-SiC films is discussed. The main issue for 3C-SiC development is the reduction of the stacking fault density, which shows an exponential decreasing trend with the film thickness tending to a saturation value of about 1000 cm-1. Some aspect of processing will be also faced with the realization of cantilever for Young modulus calculations and the implantation of Al ions for the study of damaging and recovery of the 3C-SiC crystal.

MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAs

1993 ◽  
Vol 22 (8) ◽  
pp. 835-842 ◽  
Author(s):  
S. M. Johnson ◽  
J. A. Vigil ◽  
J. B. James ◽  
C. A. Cockrum ◽  
W. H. Konkel ◽  
...  
Keyword(s):  
Large Area ◽  
Si Substrates

Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

2009 ◽  
Vol 311 (10) ◽  
pp. 2987-2991 ◽  
Author(s):  
T. Ohachi ◽  
N. Yamabe ◽  
H. Shimomura ◽  
T. Shimamura ◽  
O. Ariyada ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Si Substrates ◽  
Atomic Flux

Large area industrial solar cells on low cost 100% Mc SoG Si substrates: Efficiencies exceeding 16%

2010 ◽  
Author(s):  
A. Halm ◽  
J. Jourdan ◽  
S. Nichol ◽  
B. Ryningen ◽  
H. Tathgar ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Cost ◽  
Large Area ◽  
Si Substrates
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