Investigation of Schottky Barriers

1988 ◽  
Author(s):  
Mark VAN Schilfgaarde
Keyword(s):  
Schottky Barriers

Resonant tunneling through traps in Schottky barriers

1977 ◽  
Vol 38 (11) ◽  
pp. 1443-1448 ◽  
Author(s):  
G. Sarrabayrouse ◽  
J. Buxo ◽  
D. Esteve
Keyword(s):  
Resonant Tunneling ◽  
Schottky Barriers

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Investigation of Schottky Barriers

1989 ◽  
Author(s):  
Mark Van Schilfgaarde
Keyword(s):  
Schottky Barriers

Electrical Properties of Silicon Nanowires Schottky Barriers Prepared by MACE at Different Etching Time

Silicon ◽  
2021 ◽  
Author(s):  
Ahlem Rouis ◽  
Neila Hizem ◽  
Mohamed Hassen ◽  
Adel Kalboussi
Keyword(s):  
Electrical Properties ◽  
Silicon Nanowires ◽  
Schottky Barriers ◽  
Etching Time

Combined Si Schottky barriers and SiGe/Si multi quantum wells for infrared detection

2011 ◽  
Author(s):  
M. Moeen ◽  
M. Kolahdouz ◽  
M. Ostling ◽  
H. H. Radamson
Keyword(s):  
Quantum Wells ◽  
Schottky Barriers ◽  
Infrared Detection

Role of amphoteric defects in the formation of metal/GaAs Schottky barriers

1991 ◽  
Vol 58 (24) ◽  
pp. 2785-2787 ◽  
Author(s):  
T. Zhang ◽  
T. W. Sigmon
Keyword(s):  
Schottky Barriers

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Effects of La3+ doping ions on dielectric properties and formation of Schottky barriers at internal interfaces in a Ca2Cu2Ti4O12 composite system

2014 ◽  
Vol 25 (10) ◽  
pp. 4657-4663 ◽  
Author(s):  
Prasit Thongbai ◽  
Jutapol Jumpatam ◽  
Bundit Putasaeng ◽  
Teerapon Yamwong ◽  
Vittaya Amornkitbamrung ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Composite System ◽  
Schottky Barriers

Excess capacitance and non-ideal Schottky barriers on GaAs

1976 ◽  
Vol 19 (7) ◽  
pp. 557-559 ◽  
Author(s):  
Prahalad K. Vasudev ◽  
Brenton L. Mattes ◽  
Edward Pietras ◽  
Richard H. Bube
Keyword(s):  
Schottky Barriers

Surface composition and characteristics of oxide‐free Ga1–xAlxAs (110) Schottky barriers

1979 ◽  
Vol 16 (2) ◽  
pp. 514-516 ◽  
Author(s):  
B. W. Lee ◽  
L. Jou ◽  
P. Mark ◽  
J. L. Yeh ◽  
E. So
Keyword(s):  
Surface Composition ◽  
Schottky Barriers
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