Copper Film Deposition by Hydrogen Atom Reactions with Copper Compounds

1990 ◽  
Vol 203 ◽  
Author(s):  
Hongwen Li ◽  
Robert R. Reeves
Keyword(s):  
Metal Film ◽  
Copper Film ◽  
Film Deposition ◽  
Copper Films ◽  
Hydrogen Atoms ◽  
Good Adhesion ◽  
Metal Compounds ◽  
Copper Compounds ◽  
Substrate Temperatures ◽  
Purity Copper

ABSTRACTA novel low temperature CVD process - atom reaction CVD process for metal film depositions has been developed by using hydrogen atoms reacting with metal compounds. High purity copper films, with low resistivity of ∼ 2 μΩ cm, good step coverage to submicron holes and good adhesion to various substrates, were obtained by using this process with Cu(HFA)2 source at substrate temperatures below 150 °C.

Epitaxial Growth of Copper Film by MOCVD

2016 ◽  
Vol 680 ◽  
pp. 507-510 ◽  
Author(s):  
Rong Tu ◽  
Jin Huang ◽  
Song Zhang ◽  
Lian Meng Zhang
Keyword(s):  
Epitaxial Growth ◽  
Copper Film ◽  
Preferred Orientation ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Metal Organic ◽  
Single Crystal Sapphire ◽  
Substrate Temperatures ◽  
Electronic Microscope

Copper thin films were deposited on single crystal sapphire substrate via metal-organic MOCVD using Cu (acac)2 as precursor. X-ray diffraction (XRD) and Scanning Electronic Microscope (SEM) were employed for studying preferred orientation and microstructure. Atomic Force Microscope was utilized in order to characterize roughness of copper thin layer. By calculation of the Gibbs free energy, the reactions have been deeply understood. Depositions were carried out at various substrate temperatures in the rage 473K to 673K. It has been revealed that temperature determined the orientation and microstructure of copper films. At 673K, copper films have exhibited preferred orientation, smooth surface and connected grains, which proved that this copper thin film can act as precursor. Based on the study of epitaxial growth of copper films, a schematic diagram of epitaxial growth relationship is suggested for the step by step depositions processes.

Chemical Vapor Deposition of Copper from an Organometallic Source

1990 ◽  
Vol 181 ◽  
Author(s):  
David B. Beach ◽  
William F. Kane ◽  
Francoise K. Legoues ◽  
Christopher J. Knors
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Copper Film ◽  
Chemical Vapor ◽  
Auger Spectroscopy ◽  
Copper Films ◽  
Phosphine Complexes ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTHigh purity copper has been deposited from trialkyl phosphine complexes of cyclopentadienyl and methylcyclopentadienyl copper(I) by thermal chemical vapor deposition (CVD). Films as thick as 4.4 μm have been deposited at growth rates of up to 2000 Å/min with resistivites typically 2.0 μΩ cm, just slightly higher than bulk copper. Depositions were carried out at substrate temperatures between 150 and 220 °C on a variety of substrates including Si, SiO2, polyimide, and Cr/Cu. At low substrate temperatures, copper film growth appears to show some selectivity for transition metal surfaces. An activation energy of 18 kcal/mole has been measured for film growth on Cu seeded substrates. CVD copper films have been characterized by Auger spectroscopy which showed that carbon and oxygen levels are below the limits of detection. Transmission electron microscopy revealed that the copper grain size was ∼0.6μm and the grain boundaries are free of precipitates. Films show good conformality.

Copper Film Deposition Using H and O Atoms

1992 ◽  
Vol 260 ◽  
Author(s):  
Judith Ann Halstead ◽  
Peter S. Locke ◽  
Robert R. Reeves
Keyword(s):  
Oxygen Atom ◽  
Copper Oxide ◽  
Copper Complex ◽  
Room Temperature ◽  
Copper Complexes ◽  
Copper Film ◽  
Subsequent Treatment ◽  
Film Deposition ◽  
Reaction Process ◽  
Copper Films

ABSTRACTThe formation of thin copper films by H-atom reaction with Cu(FOD)2 and Cu(HFA)2 has been demonstrated at near room temperature. Oxygen atoms have now also been reacted with these β-diketonate copper complexes, producing films of copper oxide which can be readily reduced by subsequent treatment with H-atoms. The thin copper films produced are conductive and highly adherent. The oxygen atom reaction with the copper complex produces a visible chemiluminescent glow, yielding information on the nature of the reaction process.

Metal film deposition on carbon anodes for high rate charge–discharge of Li–ion batteries

1999 ◽  
Vol 15 (3) ◽  
pp. 225-229 ◽  
Author(s):  
T. Takamura ◽  
J. Suzuki ◽  
C. Yamada ◽  
K. Sumiya ◽  
K. Sekine
Keyword(s):  
Metal Film ◽  
Film Deposition ◽  
High Rate ◽  
Li Ion Batteries ◽  
Li Ion ◽  
Carbon Anodes ◽  
Charge Discharge

Development of Thin Metal Film Deposition Process for the Intravascular Catheter

1999 ◽  
Author(s):  
Seok Chung ◽  
Jun Keun Chang ◽  
Dong Chul Han
Keyword(s):  
Metal Film ◽  
Three Dimensional ◽  
Deposition Process ◽  
Medical Application ◽  
Thin Metal Film ◽  
Film Deposition ◽  
Thin Metal ◽  
Mems Devices ◽  
Sensors And Actuators ◽  
Custom Made

Abstract To make some MF.MS devices such as sensors and actuators be useful in the medical application, it is required to integrate this devices with power or sensor lines and to keep the hole devices biocompatible. Integrating micro machined sensors and actuators with conventional copper lines is incompatible because the thin copper lines are not easy to handle in the mass production. To achieve the compatibility of wiring method between MEMS devices, we developed the thin metal film deposition process that coats micropattered thin copper films on the non silicon-wafer substrate. The process was developed with the custom-made three-dimensional thin film sputter/evaporation system. The system consists of process chamber, two branch chambers, substrate holder unit and linear/rotary motion feedthrough. Thin metal film was deposited on the biocompatible polymer, polyurethane (PellethaneR) and silicone, catheter that is 2 mm in diameter and 1,000 mm in length. We deposited Cr/Cu and Ti/Cu layer and made a comparative study of the deposition processes, sputtering and evaporation. The temperature of both the processes were maintained below 100°C, for the catheter not melting during the processes. To use the films as signal lines connect the signal source to the actuator on the catheter tip, we machined the films into desired patterns with the eximer laser. In this paper, we developed the thin metal film deposition system and processes for the biopolymeric substrate used in the medical MEMS devices.

Adhesion mechanisms of copper films deposited onto laser-irradiated alumina

1997 ◽  
Vol 12 (11) ◽  
pp. 3174-3181 ◽  
Author(s):  
Jae-Won Park ◽  
Anthony J. Pedraza ◽  
Douglas H. Lowndes ◽  
William R. Allen
Keyword(s):  
Laser Irradiation ◽  
Copper Film ◽  
Alumina Substrate ◽  
Interfacial Region ◽  
Transitional Region ◽  
Copper Films ◽  
High Adhesion ◽  
Strong Adhesion ◽  
Oxygen Excess ◽  
Higher Temperature

Strong adhesion between a deposited copper film and an alumina substrate takes place when the substrate is laser-irradiated prior to deposition. A post-deposition annealing is required to achieve the strong bonding. In this work, the interfacial region between the copper film and the alumina substrate was analyzed using Auger Electron Spectroscopy (AES). It was found that a transitional region is always present in couples that have a high adhesion strength, while little or no transitional region was found in weakly bonded couples. The transitional region depends on the laser irradiation atmosphere. In the case of laser irradiation in air, oxygen excess was found on the surface of the alumina substrate, and in the copper/alumina couple the transitional region consists of a copper oxide and a Cu–Al double oxide. When the laser irradiation was performed in a reducing atmosphere (Ar–4% H2), substoichiometric alumina and metallic aluminum were found on the surface of the substrate and also a reaction between copper and the substoichiometric aluminum oxide was detected in the subsurface. Although the substoichiometric alumina is formed on the surface irradiated in Ar–4% H2, a stable Al2O3 thin layer is formed on the outmost surface because the irradiated substrate is exposed to the atmosphere before deposition. This reoxidized layer remains whole at the interface of the couple upon low temperature (at least up to 300 °C) annealing, while it is ruptured upon higher temperature annealing (500 °C in this work). In the latter case, the copper film can contact and react with the substoichiometric alumina formed in the subsurface of the substrate irradiated in the Ar–4% H2 atmosphere. It is concluded that the Cu–Al–O interfacial compound formed in the transitional region causes the strong adhesion between the copper film and the alumina substrate.

Constitutive Response of Passivated Copper Films: Experiments and Analyses

2001 ◽  
Vol 695 ◽  
Author(s):  
Y.-L. Shen ◽  
U. Ramamurty
Keyword(s):  
Thermal Loading ◽  
Silicon Oxide ◽  
Kinematic Hardening ◽  
Copper Film ◽  
Temperature Response ◽  
Copper Interconnects ◽  
Constitutive Law ◽  
Copper Films ◽  
Rate Dependent ◽  
Constitutive Response

ABSTRACTThe constitutive behavior of passivated copper films is studied. Stresses in copper films of thickness ranging from 1000 nm to 40 nm, passivated with silicon oxide on a quartz or silicon substrate, were measured using the curvature method. The thermal cycling spans a temperature range from - 196 to 600°C. It is seen that the strong relaxation at high temperatures normally found in unpassivated films is nonexistent for passivated films. The copper film did not show any rate-dependent effect over a range of heating/cooling rate from 5 to 25°C/min. Further analyses showed that significant strain hardening exists during the course of thermal loading. In particular, the measured stress- temperature response can only be fitted with a kinematic hardening model, if a simple constitutive law within the continuum plasticity framework is to be used. The analytic procedures for extracting the film properties are presented. Implications to stress modeling of copper interconnects in actual devices are discussed.

Thermomechanical Stresses in Copper Films at Elevated Temperature

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000129-000135 ◽  
Author(s):  
Martin Lederer ◽  
Javad Zarbakhsh ◽  
Rui Huang ◽  
Thomas Detzel ◽  
Brigitte Weiss
Keyword(s):  
Elevated Temperature ◽  
Thermal Cycling ◽  
Copper Film ◽  
Film Stress ◽  
Elastic Response ◽  
Copper Films ◽  
Thermomechanical Stress ◽  
Wafer Curvature ◽  
Electronic Parts ◽  
Stoney Formula

Thermomechanical stresses in metallic films are a root cause for material fatigue which limits the lifetime of electronic devices. Since the yield stress of metals is temperature dependent, plastic deformations during thermal cycling are increased at elevated temperature. This effect reduces the reliability of electronic parts. In order to investigate this problem, a 20μm thick copper film was deposited on a silicon wafer. After annealing at 400°C, the sample was exposed to thermal cycles in the temperature range between room temperature and 600°C. The different values for the CTE of copper and silicon lead to a curvature of the sample. The wafer curvature was measured by a multi-laser beam method. On the basis of the experimental results, a new theoretical model was developed, which describes the stress evolution in the film during thermal cycling. In this investigation, the relation between wafer curvature and film stress is calculated by analogy to a model by Freund [1] which is an improvement to the well known Stoney formula. In addition to the elastic response, the new model considers plasticity of the copper film as well as temperature dependence of creep. It is demonstrated that the model can well describe the experiment and thus thermomechanical stress in copper films.

Diamond Deposition by a Nonequilibrium Plasma Jet

1991 ◽  
Vol 250 ◽  
Author(s):  
D. G. Keil ◽  
H. F. Calcote ◽  
W. Felder
Keyword(s):  
Substrate Surface ◽  
Supersonic Nozzle ◽  
Supersonic Jet ◽  
Plasma Jet ◽  
Nonequilibrium Plasma ◽  
Hydrogen Atoms ◽  
Raman Spectrometry ◽  
Diamond Deposition ◽  
Laser Raman ◽  
Substrate Temperatures

AbstractA nonequilibrium plasma jet has been used to deposit diamond films on a number of substrates, including silicon, silicon nitride, alumina, and molybdenum. Hydrogen is passed through a glow discharge and expanded through a supersonic nozzle to produce a highly nonequilibrium jet. Methane is added downstream of the nozzle, where it mixes and reacts with the nonequilibrium concentration of hydrogen atoms. The resulting supersonic jet strikes the substrate surface producing a high quality (determined by laser Raman spectrometry) adherent diamond film. Because of the low jet temperature, substrate cooling is unnecessary. Diamond deposition rates have exceeded 2 mg/kWh and I μm/h averaged over 16 cm2 area; good quality films prepared at substrate temperatures below 600 K. have been

Sign in / Sign up

Export Citation Format

Share Document