scholarly journals Variability Estimation in Resistive Switching Devices, a Numerical and Kinetic Monte Carlo Perspective

2022 ◽  
Author(s):  
David Maldonado ◽  
Samuel Aldana ◽  
Mireia B. Gonzalez ◽  
Francisco Jimenez-Molinos ◽  
Maria Jose Ibañez ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Resistive Switching ◽  
Kinetic Monte Carlo ◽  
Switching Devices

A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO2/Si RRAMs

2018 ◽  
Author(s):  
S. Aldana ◽  
P. Garcia-Fernandez ◽  
R. Romero-Zaliz ◽  
M.B. Gonzalez ◽  
F. Jimenez-Molinos ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Resistive Switching ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Simulator

Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

2020 ◽  
Vol 53 (22) ◽  
pp. 225106 ◽  
Author(s):  
S Aldana ◽  
P García-Fernández ◽  
R Romero-Zaliz ◽  
M B González ◽  
F Jiménez-Molinos ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Resistive Switching ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Approach ◽  
Valence Change

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

2017 ◽  
Vol 50 (33) ◽  
pp. 335103 ◽  
Author(s):  
S Aldana ◽  
P García-Fernández ◽  
Alberto Rodríguez-Fernández ◽  
R Romero-Zaliz ◽  
M B González ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Resistive Switching ◽  
Simulation Study ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Simulation Study ◽  
Kinetic Monte Carlo Simulation

Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory

2015 ◽  
Vol 17 (14) ◽  
pp. 8627-8632 ◽  
Author(s):  
Shengjun Qin ◽  
Zhan Liu ◽  
Guo Zhang ◽  
Jinyu Zhang ◽  
Yaping Sun ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Resistive Switching ◽  
Kinetic Monte Carlo ◽  
Random Access ◽  
Growth Dynamics ◽  
Random Access Memory ◽  
Access Memory ◽  
Metallic Filament ◽  
Conductive Bridge ◽  
Atomistic Study

The growth dynamics for metallic filaments in conductive-bridge resistive-switching random access memory (CBRAM) are studied using the kinetic Monte Carlo (KMC) method.

scholarly journals Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Constant Voltage ◽  
Switching Device ◽  
Current Stress ◽  
Electric Stress ◽  
State Evolution ◽  
Conductive Bridge ◽  
Resistance State ◽  
Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

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