Assessment of argon ion laser dispersive Raman spectroscopy for hot cell applications

A simple rapid method has been developed for the quantitative analysis of styrene monomer in butadiene/styrene latexes using Raman spectroscopy. The latex samples were sealed in capillary tubes and scanned under high resolution conditions using a Spex Ramalog 1401 with a Spectra Physics 2 W argon ion laser. The Raman method involves ratioing the olefinic C=C (1632 cm−1) band of styrene monomer to the trans 1:4 C=C (1668 cm−1) band of butadiene in the butadiene/styrene polymer. Typical samples were found to have as low an unreacted styrene concentration as 0.7 wt. %. Reproducibility between samples was found to be within 0.1%. The values of residual styrene obtained by the Raman technique agreed within 0.25% with those obtained by liquid chromatography.

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Suppression of fluorescence interference via wavelength shift-keyed Raman spectroscopy using an argon ion laser and acousto-optic tunable filter

Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy ◽

10.1016/s1386-1425(98)00015-8 ◽

1998 ◽

Vol 54 (8) ◽

pp. 1041-1047 ◽

Cited By ~ 7

Author(s):

C.M Stellman ◽

F Bucholtz

Keyword(s):

Raman Spectroscopy ◽

Tunable Filter ◽

Wavelength Shift ◽

Argon Ion Laser ◽

Ion Laser ◽

Argon Ion

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CW oscillation on a new argon ion laser line at 5062 Å and relation to laser Raman spectroscopy

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1979.1070152 ◽

1979 ◽

Vol 15 (9) ◽

pp. 842-843

Author(s):

J. Bennett ◽

W. Bennett

Keyword(s):

Raman Spectroscopy ◽

Laser Line ◽

Laser Raman Spectroscopy ◽

Laser Raman ◽

Argon Ion Laser ◽

Ion Laser ◽

Argon Ion

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Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

Journal of Metastable and Nanocrystalline Materials ◽

10.4028/www.scientific.net/jmnm.23.43 ◽

2005 ◽

Vol 23 ◽

pp. 43-46

Author(s):

H.S. Mavi ◽

S. Rath ◽

Arun Shukla

Keyword(s):

Quantum Confinement ◽

Silicon Nanocrystals ◽

Laser Wavelength ◽

Interconnected Network ◽

Substrate Type ◽

Argon Ion Laser ◽

Si Nanocrystals ◽

Ion Laser ◽

Laser Induced Etching ◽

Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

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