scholarly journals Simulation and Modeling of Silicon Based Single Electron Transistor

2018 ◽  
Vol 8 (2) ◽  
pp. 900
Author(s):  
Malik Ashter Mehdy ◽  
Mariagrazia Graziano ◽  
Gianluca Piccinini
Keyword(s):  
Transmission Spectrum ◽  
Coulomb Blockade ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Quantum Dot ◽  
Proposed Model ◽  
Current Voltage ◽  
Transport Direction ◽  
Silicon Based ◽  
Non Equilibrium

<p>In this work, we simulated and modeled silicon quantum dot based single electron transistor (SET). We simulated the device using non-equilibrium Green’s function (NEGF) formalism in transport direction coupled with Schrodinger equation in transverse directions. The characteristics of SET such as Coulomb blockade and Coulomb diamonds were observed. We also present a new efficient model to calculate the current voltage (IV) characteristics of the SET. The IV characteristic achieved from the model are very similar to those from simulations both in shape and magnitude. The proposed model is capable of reproducing the Coulomb diamond diagram in good agreement with the simulations. The model, which is based on transmission spectrum, is simple, efficient and provides insights on the physics of the device. The transmission spectrum at equilibrium is achieved from simulations and given as input to the model. The model then calculates the evolved transmission spectra at non-equilibrium conditions and evaluates the current using Landauers formula.</p>

scholarly journals Single electron transistor: energy-level broadening effect and thermionic contribution

2017 ◽  
Vol 51 (12) ◽  
pp. 1711
Author(s):  
A. Nasri ◽  
A. Boubaker ◽  
W. Khaldi ◽  
B. Hafsi ◽  
A. Kalboussi
Keyword(s):  
Energy Level ◽  
Coulomb Blockade ◽  
Theoretical Study ◽  
Differential Resistance ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Discrete Energy ◽  
Silicon Quantum Dot ◽  
Novel Approach ◽  
Tunnel Resistance

In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si-QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy-level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I-V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined. DOI: 10.21883/FTP.2017.12.45191.8239

scholarly journals SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SINGLE ELECTRON TRANSISTOR USING NEMO-VN2

2012 ◽  
Vol 15 (3) ◽  
pp. 15-25
Author(s):  
Hien Sy Dinh
Keyword(s):  
Green Function ◽  
Function Method ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Graphic User Interface ◽  
Green Function Method ◽  
Proposed Model ◽  
Current Voltage ◽  
Current Voltage Characteristics

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work we use the simulator to explore the performance of single electron transistor. The model is base on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored. Some characteristics reproduced by the proposed model are compared with experimental results of single electron transistor and good agreements are validated.

CHARGE STABILITY AND CONDUCTANCE ANALYSIS OF ANTHRACENE-BASED SINGLE ELECTRON TRANSISTOR

2013 ◽  
Vol 12 (06) ◽  
pp. 1350045 ◽  
Author(s):  
ANURAG SRIVASTAVA ◽  
BODDEPALLI SANTHIBHUSHAN ◽  
PANKAJ DOBWAL
Keyword(s):  
Coulomb Blockade ◽  
Density Functional ◽  
Stability Diagram ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Functional Theory ◽  
Charge Stability ◽  
Anthracene Molecule ◽  
The Stability ◽  
Experimental Values

The present paper discusses the investigation of electronic properties of anthracene-based single electron transistor (SET) operating in coulomb blockade region using Density Functional Theory (DFT) based Atomistix toolkit-Virtual nanolab. The charging energies of anthracene molecule in isolated as well as electrostatic SET environments have been calculated for analyzing the stability of the molecule for different charge states. Study also includes the analysis of SET conductance dependence on source/drain and gate potentials in reference to the charge stability diagram. Our computed charging energies for anthracene in isolated environment are in good agreement with the experimental values and the proposed anthracene SET shows good switching properties in comparison to other acene series SETs.

Observation of Coulomb Blockade in Resistively Coupled Single Electron Transistor

1998 ◽  
Author(s):  
Yuri Pashkin ◽  
Yasunobu Nakamura ◽  
Jaw-Shen Tsai
Keyword(s):  
Coulomb Blockade ◽  
Single Electron ◽  
Single Electron Transistor

SINGLE-ELECTRON TUNNELING IN DOUBLE-BARRIER NANOSTRUCTURES

1992 ◽  
Vol 06 (13) ◽  
pp. 2321-2343 ◽  
Author(s):  
V.J. GOLDMAN ◽  
BO SU ◽  
J.E. CUNNINGHAM
Keyword(s):  
Coulomb Blockade ◽  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Theoretical Models ◽  
Single Electron ◽  
Double Barrier ◽  
Current Voltage ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

We review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models.

scholarly journals Cooper-pair resonances and subgap Coulomb blockade in a superconducting single-electron transistor

2007 ◽  
Vol 76 (17) ◽  
Author(s):  
J. J. Toppari ◽  
T. Kühn ◽  
A. P. Halvari ◽  
J. Kinnunen ◽  
M. Leskinen ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Cooper Pair ◽  
Single Electron ◽  
Single Electron Transistor

Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor

1999 ◽  
Vol 75 (4) ◽  
pp. 566-568 ◽  
Author(s):  
J. W. Park ◽  
K. S. Park ◽  
B. T. Lee ◽  
C. H. Lee ◽  
S. D. Lee ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistor
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