Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ X-ray diffraction

2005 ◽  
Vol 357 (1-2) ◽  
pp. 165-169 ◽  
Author(s):  
Vladimir M. Kaganer ◽  
Wolfgang Braun ◽  
Bernd Jenichen ◽  
Klaus H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Kinetics Of

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Bi-Based Superconducting Multilayers Obtained by Molecular Beam Epitaxy

1999 ◽  
Vol 13 (09n10) ◽  
pp. 991-996
Author(s):  
M. Salvato ◽  
C. Attanasio ◽  
G. Carbone ◽  
T. Di Luccio ◽  
S. L. Prischepa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Xrd Analysis ◽  
High Energy ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
X Ray ◽  
Diffraction Model ◽  
Different Thickness

High temperature superconducting multilayers have been obtained depositing Bi2Sr2CuO6+δ(2201) and ACuO2 layers, where A is Ca or Sr, by Molecular Beam Epitaxy (MBE) on MgO and SrTiO3 substrates. The samples, formed by a sequence of 2201/ACuO2 bilayers, have different thickness of ACuO2 layers while the thickness of the 2201 layers is kept constant. The surface structure of each layer has been monitored by in situ Reflection High Energy Electron Diffraction (RHEED) analysis which has confirmed a 2D nucleation growth. X-ray diffraction (XRD) analysis has been used to confirm that the layered structure has been obtained. Moreover, one-dimensional X-ray kinematic diffraction model has been developed to interpret the experimental data and to estimate the period of the multilayers. Resistive measurements have shown that the electrical properties of the samples strongly depend on the thickness of the ACuO2 layers.

Surface dynamics of III—V semiconductors studied by in situ X-ray diffraction during molecular beam epitaxy

2005 ◽  
Vol 220 (2/3) ◽  
Author(s):  
Wolfgang Braun ◽  
Vladimir M. Kaganer ◽  
Bernd Jenichen ◽  
Brad Tinkham ◽  
Klaus H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Surface Dynamics ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Deposition Kinetics ◽  
The Mean

AbstractWe study the coarsening of two-dimensional crystalline islands on the (001) face of GaAs, InAs and GaSb after deposition at typical growth conditions in molecular beam epitaxy. The time-resolved island/pit size distributions are measured in situ using synchrotron X-ray diffraction and are analyzed together with the diffraction intensity oscillations during deposition. Whereas the deposition kinetics is similar for the three materials, they strongly differ in the coarsening. During coarsening, the mean correlation length grows proportional to

Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy

MRS Advances ◽  
2017 ◽  
Vol 2 (3) ◽  
pp. 189-194
Author(s):  
Franck Natali ◽  
Joe Trodahl ◽  
Stéphane Vézian ◽  
Antoine Traverson ◽  
Benjamin Damilano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
Doped Semiconductors ◽  
X Ray ◽  
Resistivity Measurements

ABSTRACTGdN/SmN based superlattices have been grown by molecular beam epitaxy. In-situ reflection high energy electron diffraction was used to evaluate the evolution of the epitaxial growth and the structural properties were assessed by ex-situ X-ray diffraction. Hall Effect and resistivity measurements as a function of the temperature establish that the superlattices are heavily n-type doped semiconductors and the electrical conduction resides in both REN layers, SmN and GdN.

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

X-Ray Diffraction Study of Rare Earth Epitaxial Structures Grown by MBE onto (111) GaAs

1989 ◽  
Vol 151 ◽  
Author(s):  
W. R. Bennett ◽  
R. F. C. Farrow ◽  
S. S. P. Parkin ◽  
E. E. Marinero
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Rare Earth Metal ◽  
Molecular Beam ◽  
Earth Metal ◽  
Magnetic Ordering ◽  
Metal Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strain Components

ABSTRACTWe report on the new epitaxial system LaF3/Er/Dy/Er/LaF3/GaAs (111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films and multilayers.

Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Latigt ◽  
Pierre Lefebvre ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Stark Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantum Confined Stark Effect ◽  
Sapphire Substrates ◽  
Gan Buffer Layer ◽  
Large Quantum

AbstractAIGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.

Extended X-ray Absorption Fine Structure Studies of GaN Epilayers Doped in situ with Er and Eu During Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
V. Katchkanov ◽  
J. F. W. Mosselmans ◽  
S. Dalmasso ◽  
K. P. O'Donnell ◽  
R. W. Martin ◽  
...  
Keyword(s):  
Fine Structure ◽  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Local Structure ◽  
Molecular Beam ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption ◽  
The Eu

ABSTRACTThe local structure around Er and Eu atoms introduced into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure above the appropriate rare-earth X-ray absorption edge. The samples were doped in situ during growth by Molecular Beam Epitaxy. The formation of ErN clusters was found in samples with high average Er concentrations of 32±6% and 12.4±0.8%, estimated by Wavelength Dispersive X-ray analysis. When the average Er concentration is decreased to 6.0±0.2%, 1.6±0.2% and 0.17±0.02%, Er is found in localised clusters of ErGaN phase with high local Er content. Similar behaviour is observed for Eu-doped samples. For an average Eu concentration of 30.5±0.5% clusters of pure EuN occur. Decreasing the Eu concentration to 10.4±0.5% leads to EuGaN clusters with high local Eu content. However, for a sample with an Eu concentration of 14.2±0.5% clustering of Eu was not observed.

scholarly journals A portable molecular beam epitaxy system for in situ x-ray investigations at synchrotron beamlines

2012 ◽  
Vol 83 (10) ◽  
pp. 105112 ◽  
Author(s):  
T. Slobodskyy ◽  
P. Schroth ◽  
D. Grigoriev ◽  
A. A. Minkevich ◽  
D. Z. Hu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Molecular Beam Epitaxy System ◽  
Synchrotron Beamlines
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