scholarly journals Туннельный ток во встречных диодах Шоттки, образованных контактами между вырожденным GaN n-типа и металлом

2018 ◽  
Vol 52 (6) ◽  
pp. 630
Author(s):  
И.О. Майборода ◽  
Ю.В. Грищенко ◽  
И.С. Езубченко ◽  
И.С. Соколов ◽  
И.А. Черных ◽  
...  
Keyword(s):  
Barrier Height ◽  
Potential Barrier ◽  
Current Density ◽  
Contact Area ◽  
Electron Tunneling ◽  
Schottky Diodes ◽  
Nonlinear Behavior ◽  
Free Carrier ◽  
Potential Barrier Height ◽  
Potential Barriers

AbstractThe nonlinear behavior of the I – V characteristics of symmetric contacts between a metal and degenerate n -GaN, which form oppositely connected Schottky diodes, is investigated at free-carrier densities from 1.5 × 10^19 to 2.0 × 10^20 cm^–3 in GaN. It is demonstrated that, at an electron density of 2.0 × 10^20 cm^–3, the conductivity between metal (chromium) and GaN is implemented via electron tunneling and the resistivity of the Cr–GaN contact is 0.05 Ω mm. A method for determining the parameters of potential barriers from the I – V characteristics of symmetric opposite contacts is developed. The effect of pronounced nonuniformity of the current density and voltage distributions over the contact area at low contact resistivity is taken into account. The potential-barrier height for Cr– n ^+-GaN contacts is found to be 0.47 ± 0.04 eV.

The potential barrier height for a Jahn-Teller center

2004 ◽  
Vol 99 (1) ◽  
pp. 189-196 ◽  
Author(s):  
V. N. Vasyukov ◽  
A. D. Prokhorov ◽  
V. P. D’yakonov ◽  
H. Szymczak
Keyword(s):  
Barrier Height ◽  
Potential Barrier ◽  
Potential Barrier Height ◽  
Jahn Teller

scholarly journals Effects of Charge Compensation on Colossal Permittivity and Electrical Properties of Grain Boundary of CaCu3Ti4O12 Ceramics Substituted by Al3+ and Ta5+/Nb5+

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3294
Author(s):  
Jakkree Boonlakhorn ◽  
Jedsada Manyam ◽  
Pornjuk Srepusharawoot ◽  
Sriprajak Krongsuk ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Barrier Height ◽  
Potential Barrier ◽  
Charge Compensation ◽  
Solid State Reaction Method ◽  
Wide Frequency Range ◽  
Potential Barrier Height

The effects of charge compensation on dielectric and electrical properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics (x = 0−0.05) prepared by a solid-state reaction method were studied based on the configuration of defect dipoles. A single phase of CaCu3Ti4O12 was observed in all ceramics with a slight change in lattice parameters. The mean grain size of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics was slightly smaller than that of the undoped ceramic. The dielectric loss tangent can be reduced by a factor of 13 (tanδ ~0.017), while the dielectric permittivity was higher than 104 over a wide frequency range. Impedance spectroscopy showed that the significant decrease in tanδ was attributed to the highly increased resistance of the grain boundary by two orders of magnitude. The DFT calculation showed that the preferential sites of Al and Nb/Ta were closed together in the Ti sites, forming self-charge compensation, and resulting in the enhanced potential barrier height at the grain boundary. Therefore, the improved dielectric properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics associated with the enhanced electrical properties of grain boundaries. In addition, the non-Ohmic properties were also improved. Characterization of the grain boundaries under a DC bias showed the reduction of potential barrier height at the grain boundary. The overall results indicated that the origin of the colossal dielectric properties was caused by the internal barrier layer capacitor structure, in which the Schottky barriers at the grain boundaries were formed.

Potential Barrier Height Analysis of AlGaInP Multi-Quantum Barrier (MQB)

1990 ◽  
Vol 29 (Part 2, No. 11) ◽  
pp. L1977-L1980 ◽  
Author(s):  
Takeshi Takagi ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Barrier Height ◽  
Potential Barrier ◽  
Potential Barrier Height

scholarly journals Low potential barrier height effects in magnetic tunneling junctions

2007 ◽  
Vol 76 (21) ◽  
Author(s):  
E. S. Cruz de Gracia ◽  
L. S. Dorneles ◽  
L. F. Schelp ◽  
S. R. Teixeira ◽  
M. N. Baibich
Keyword(s):  
Barrier Height ◽  
Potential Barrier ◽  
Potential Barrier Height ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

Potential Barrier Height Effects on the Intrasubband and Intersubband Quasi-One-Dimensional Plasmons

1997 ◽  
Vol 11 (09n10) ◽  
pp. 441-451 ◽  
Author(s):  
Paulo César Miranda Machado ◽  
Francisco A. P. Osório ◽  
A. Newton Borges
Keyword(s):  
Barrier Height ◽  
Potential Barrier ◽  
Random Phase Approximation ◽  
Rectangular Cross Section ◽  
Pair Correlation ◽  
Random Phase ◽  
Potential Effect ◽  
Potential Barrier Height ◽  
Energy Structure ◽  
Barrier Heights

The effects of the potential barrier height on the collective excitations of a electron gas confined in a GaAs-AlxGa1-xAs quantum wire of rectangular cross-section are investigated theoretically. For several potential barrier heights, we calculated the plasmon energy, structure factor and pair-correlation function, within the Random-Phase Approximation regime, considering a three-subband model with only the lowest subband populated by electrons. We verified that the intersubband plasmon is more sensitive to the potential barrier height variation than the intrasubband plasmon. We also observed that the confining potential effect decreases with the increasing of the wire-width.

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