Снижение порога генерации с помощью легирования в лазерах среднего инфракрасного диапазона на основе HgCdTe с квантовыми ямами HgTe
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AbstractThe possibility of significant lowering of the interband lasing threshold in laser structures of the mid-infrared region based on HgCdTe with HgTe quantum wells by doping with donors, which introduce δ layers near quantum wells, is proposed and analyzed. It is shown that at an optimum surface donor concentration in the δ layer of 4 × 10^10 cm^–2 and an operating temperature of >40 K, the lasing threshold at a wavelength of 20 μm can be lowered more than twofold.
1993 ◽
Vol 1
(2)
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pp. 99-108
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1997 ◽
Vol 33
(12)
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pp. 2174-2177
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2022 ◽
Vol 171
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pp. 107225
1991 ◽
Vol 6
(12)
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pp. 2694-2700
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