scholarly journals Электролюминесценция в гетероструктурах n-GaSb/InAs/ p-GaSb с одиночной квантовой ямой, выращенных методом МОГФЭ

2019 ◽  
Vol 53 (1) ◽  
pp. 50
Author(s):  
М.П. Михайлова ◽  
Э.В. Иванов ◽  
Л.В. Данилов ◽  
Р.В. Левин ◽  
И.А. Андреев ◽  
...  
Keyword(s):  
Quantum Well ◽  
Energy Levels ◽  
Energy Band Diagram ◽  
Hole Energy ◽  
Tunneling Mechanism ◽  
Radiative Transitions ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Electroluminescence Band ◽  
The Continuum

AbstractThe electroluminescent characteristics of a type-II n -GaSb/ n -InAs/ p -GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the structure and the positions of the electron and heavy-hole energy levels are calculated. The analysis of the current–voltage characteristics demonstrates that the dark current in the structure under study flows via the tunneling mechanism. Intense electroluminescence characterized by a weak temperature dependence was observed in the spectral range of 3–4 μm at T = 77 and 300 K. The main electroluminescence band ( h ν = 0.40 eV at 77 K) corresponds to direct radiative transitions between electrons from level E _1 in the InAs quantum well and heavy holes from the continuum at the n -GaSb/ n -InAs heterointerface. A low-intensity electroluminescence band at h ν = 0.27 eV ( T = 77 K) originates from indirect (tunneling) transitions from the first electron level in the quantum well to the second level of heavy holes localized in the valence-band “notch” at the n -InAs/ p -GaSb heterointerface.

Impacts of ambipolar carrier escape on current-voltage characteristics in a type-I quantum-well solar cell

2013 ◽  
Vol 103 (6) ◽  
pp. 061118 ◽  
Author(s):  
M. Jo ◽  
Y. Ding ◽  
T. Noda ◽  
T. Mano ◽  
Y. Sakuma ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Well ◽  
Type I ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Carrier Escape

Transition between N- and Z-shaped current-voltage characteristics in semiconductor multiple-quantum-well structures

2006 ◽  
Vol 100 (3) ◽  
pp. 033718 ◽  
Author(s):  
O. V. Pupysheva ◽  
A. V. Dmitriev ◽  
A. A. Farajian ◽  
H. Mizuseki ◽  
Y. Kawazoe
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Current Voltage ◽  
Current Voltage Characteristics

ENERGY LEVELS OF A POLARON IN A FINITE PARABOLIC QUANTUM WELL

2001 ◽  
Vol 15 (05) ◽  
pp. 527-535 ◽  
Author(s):  
FENG-QI ZHAO ◽  
XI XIA LIANG ◽  
SHILIANG BAN
Keyword(s):  
Excited State ◽  
Variational Method ◽  
Quantum Well ◽  
Ground State ◽  
Transition Energy ◽  
Energy Levels ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Hole Energy ◽  
First Excited State

The effects of the electron–phonon interaction on the electron (or hole) energy levels in parabolic quantum well (PQW) structures are studied. The ground state, the first excited state and the transition energy of the electron (or hole) in the GaAs/Al 0.3 Ga 0.7 As parabolic quantum well are calculated by using a modified Lee–Low–Pines Variational method. The numerical results are given and discussed. A comparison between the theoretical and experimental results is made.

6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy

2005 ◽  
Vol 108-109 ◽  
pp. 713-716 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Alexander A. Lebedev ◽  
A.E. Cherenkov ◽  
Alexey N. Kuznetsov ◽  
Alla S. Tregubova ◽  
...  
Keyword(s):  
Quantum Well ◽  
Free Exciton ◽  
High Current ◽  
Excess Current ◽  
Forward Current ◽  
Current Voltage ◽  
Barrier Type ◽  
Current Voltage Characteristics ◽  
Exciton Annihilation ◽  
Injection Electroluminescence

Investigation of the multilayer 6H(n+)/3C(n)/6H(p+)-SiC heterostructure grown by sublimation epitaxy show that the injection electroluminescence (IEL) in the green region (hνmax≈2.30-2.35eV) of spectrum is dominant. This band is close to the electroluminescence peak due to defects in 6H-SiC but also can be due to free exciton annihilation in a quantum well in 3C-SiC at the 6H/3C-SiC heterointerface. At high current the IEL peak at hνmax≈2.9 eV is found. This peak (and also two another peaks in blue part of spectra: hνmax≈2.6 eV and hνmax≈2.72 eV) can be attributed to recombination in 6H-SiC. The forward current-voltage characteristics for best structures are close to those for ideal 6H-SiC pn homostructure and characterized by abrupt breakdown. A lot of structures are characterized by barrier type excess current. Structure in the region of evident 3C-SiC inclusion is characterized by high forward and reverse excess currents.

scholarly journals Особенности токопереноса в пленках поливинилового спирта с включениями многостенных углеродных нанотрубок на подложках Si

2020 ◽  
Vol 46 (12) ◽  
pp. 26
Author(s):  
С.В. Васин ◽  
M.C. Ефимов ◽  
В.А. Сергеев
Keyword(s):  
Reverse Bias ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Temperature Coefficient Of Resistance ◽  
Tunneling Mechanism ◽  
Planar Structures ◽  
Current Voltage ◽  
Multi Walled Carbon Nanotubes ◽  
Current Voltage Characteristics ◽  
Walled Carbon Nanotubes

It is shown that aluminum / polyvinyl alcohol (PVA) with the inclusion of multi-walled carbon nanotubes (MWCNTs) / silicon planar structures demonstrate rectifying properties and their current-voltage characteristics are asymmetric and non-linear. With direct bias, the structures have a positive temperature coefficient of resistance (TCR) in the temperature range of 270-350 K, while the structures without MWCNTs exhibit negative TCR. Under reverse bias, the studied structures with MWCNTs showed TCS changing sign from negative to positive. To explain the obtained dependences, the tunneling mechanism of current transfer is considered.

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