scholarly journals Компенсация нелинейности сток-затворной вольт-амперной характеристики в полевых транзисторах с длиной затвора ~100 нм

2020 ◽  
Vol 54 (9) ◽  
pp. 968
Author(s):  
Е.А. Тарасова ◽  
С.В. Оболенский ◽  
C.В. Хазанова ◽  
Н.Н. Григорьева ◽  
О.Л. Голиков ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Electron Gas ◽  
Drain Current ◽  
Dimensional Electron ◽  
Gas Field ◽  
Transistor Channel ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Dimensional Electron Gas ◽  
Doping Profiles

Abstract The nonlinearity of the gate–drain current–voltage characteristics in classical Schottky transistors and two-dimensional electron gas field-effect transistors based on AlGaAs/InGaAs/GaAs and InGaAs/GaAs compounds is analyzed. The carrier velocity-overshoot effect in the transistor channel is analyzed for various doping profiles of the structures under study.

Low noise normally on and normally off two‐dimensional electron gas field‐effect transistors

1982 ◽  
Vol 40 (6) ◽  
pp. 530-532 ◽  
Author(s):  
M. Laviron ◽  
D. Delagebeaudeuf ◽  
P. Delescluse ◽  
P. Etienne ◽  
J. Chaplart ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electron Gas ◽  
Low Noise ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Gas Field ◽  
Dimensional Electron Gas
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