scholarly journals Регистрация терагерцового излучения с помощью наноструктур карбида кремния

2021 ◽  
Vol 55 (12) ◽  
pp. 1195
Author(s):  
Н.Т. Баграев ◽  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Л.Е. Клячкин ◽  
A.М. Маляренко ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Incident Radiation ◽  
Thz Radiation ◽  
Device Structure ◽  
Paramagnetic Resonance ◽  
Kinetic Dependence ◽  
Proposed Model ◽  
Source Current ◽  
Electron Paramagnetic ◽  
The Magnetic Field

The response to external terahertz (THz) radiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the frameworks of proposed model based on the quantum Faraday effect the incident radiation results in the appearance of a generated current in the edge channels with a change in the number of magnetic flux quanta and in the appearance of features in the kinetic dependence of the longitudinal voltage. The generation of intrinsic terahertz radiation inside the silicon carbide nanostructures is also revealed by the electrically-detected electron paramagnetic resonance (EDEPR) measured the longitudinal voltage as a function of the magnetic field value.

Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 145-148 ◽  
Author(s):  
Daniel Kropman ◽  
E. Mellikov ◽  
K. Lott ◽  
Tiit Kärner ◽  
Ivo Heinmaa ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Magnetic Resonance ◽  
Fermi Level ◽  
Point Defects ◽  
Interface Properties ◽  
Hydrogen Ions ◽  
Paramagnetic Resonance ◽  
Proposed Model ◽  
P Type ◽  
Electron Paramagnetic

The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its formation by means of electron paramagnetic resonance (EPR) and nucleous magnetic resonance (NMR) technique are presented. It has been shown that the diference in point defects interaction with hydrogen at the Si-SO2 interface with n- and p-type conductivity are connected with the sign of hydrogen ions incorporation dependence on the Fermi level position in accordance with the proposed model. The interface properties may be improved by laser irradiation.

High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study

2005 ◽  
Vol 483-485 ◽  
pp. 489-492 ◽  
Author(s):  
P.G. Baranov ◽  
Ivan V. Ilyin ◽  
Marina V. Muzafarova ◽  
E.N. Mokhov ◽  
S.G. Konnikov
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
High Temperature ◽  
Electron Paramagnetic Resonance Study ◽  
High Temperature Annealing ◽  
Axially Symmetric ◽  
Paramagnetic Resonance ◽  
Defect Clusters ◽  
Defect Complexes ◽  
Electron Paramagnetic

The high-temperature stable defect complexes in 6H-SiC crystals created by heavy neutron irradiation and following high-temperature annealing have been discovered by EPR. After annealing at 1500°C at least five new axially symmetric centers with the electron spin S = 1/2 and S = 1 were shown to arise in 6H-SiC crystals. The striking feature of all discovered centers is a strong hyperfine interaction with a great number (up to twelve) of equivalent host Si (C) atoms. Two models, a four-vacancy complex VSi-3VC, and a split-interstitial antisite (C2)Si or a pair of two antisites (C2)Si-SiC are discussed. There is a good probability that some of new centers could be related to the famous D1 and DII centers. After annealing at 2000°C the dc1-dc4 centers disappeared and a new triplet center labeled as N-V in the form of a silicon vacancy and a nitrogen atom in neighboring carbon substitutional position has been observed. The parameters of this center are similar to that for well-known N-V center in diamond.

Electron paramagnetic resonance of the scandium acceptor in 6H and 4H silicon carbide

2000 ◽  
Vol 15 (1) ◽  
pp. 55-60 ◽  
Author(s):  
M März ◽  
S Greulich-Weber ◽  
J-M Spaeth ◽  
E N Mokhov ◽  
E N Kalabukhova
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide

2000 ◽  
Vol 338-342 ◽  
pp. 809-812 ◽  
Author(s):  
Siegmund Greulich-Weber ◽  
M. März ◽  
Johann Martin Spaeth ◽  
E.N. Mokhov ◽  
Ekaterina N. Kalabukhova
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbide

1999 ◽  
Vol 273-274 ◽  
pp. 667-671 ◽  
Author(s):  
J.-M Spaeth ◽  
S Greulich-Weber ◽  
M März ◽  
E.N Mokhov ◽  
E.N Kalabukhova
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic
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