Локальные колебания связей кремний-кремний в нитриде кремния
2018 ◽
Vol 44
(10)
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pp. 37
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AbstractRaman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si_3N_4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si_3N_4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si_3N_4.
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1994 ◽
Vol 241
(1-2)
◽
pp. 287-290
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2001 ◽
Vol 293-295
◽
pp. 238-243
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1983 ◽
Vol 57
(1)
◽
pp. 189-193
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