Изопериодические гетероструктуры Ga-=SUB=-x-=/SUB=-In-=SUB=-1-x-=/SUB=-Sb-=SUB=-y-=/SUB=-As-=SUB=-z-=/SUB=-P-=SUB=-1-y-z-=/SUB=-/InP для планарных p-n-фотодиодов
2020 ◽
Vol 46
(19)
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pp. 38
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Isoperiodic heterostructures GaxIn1-xSbyAszP1-y-z/InP at a 1.06 to 1.6 μm wavelength interval were grown by the method of floating-zone recrystallization with temperature gradient. Absolute spectral sensitivity of ~ 0.59 A/W and a speed of ~ 10 ns were achieved. Threshold sensitivity for the fabricated photodiodes was in the range 2·10^-10 to 5·10^-11 W with a signal-to-noise ratio of 10.
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1981 ◽
Vol 39
◽
pp. 32-33
1981 ◽
Vol 39
◽
pp. 226-227
Keyword(s):
1989 ◽
Vol 47
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pp. 84-85
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1979 ◽
Vol 10
(4)
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pp. 221-230
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2020 ◽
Vol 63
(1)
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pp. 345-356
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2020 ◽
Vol E103.A
(12)
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pp. 1659-1665
2020 ◽
Vol 2020
(7)
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pp. 143-1-143-6
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