Анализ внутренних оптических потерь вертикально-излучающего лазера спектрального диапазона 1.3 μm с туннельным переходом на основе слоев n-=SUP=-+-=/SUP=--InGaAs/p-=SUP=-+-=/SUP=--InGaAs/p-=SUP=-+-=/SUP=--InAlGaAs

The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaAsP/AlGaAs a composite n++-InGaAs/р++-InGaAs/р++-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08% and 0.14% per one pass (round-trip) at temperatures of 20°С and 90°С, respectively.