scholarly journals Модификация гребневых волноводов полупроводниковых лазеров фокусированным ионным пучком

2021 ◽  
Vol 47 (24) ◽  
pp. 51
Author(s):  
А.С. Паюсов ◽  
М.И. Митрофанов ◽  
Г.О. Корнышов ◽  
А.А. Серин ◽  
Г.В. Вознюк ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Threshold Current ◽  
Optical Characteristics ◽  
Significant Modification ◽  
Etching Depth ◽  
Double Heterostructure ◽  
Ridge Waveguides ◽  
Emitting Lasers ◽  
Three Degrees Of Influence

We studied the influence of the focused ion beam milling of ridge waveguides on lasing parameters of edge-emitting lasers, based on a separate confinement double heterostructure. It is shown that there are three degrees of influence, according to the etching depth: modification of the waveguide properties only, a decrease in efficiency without changing the threshold current, and a simultaneous deterioration in the threshold current and efficiency with significant modification of the optical characteristics of the laser.

An Atlas of ESD Failure Signatures in Vertical Cavity Surface Emitting Lasers

2005 ◽  
Author(s):  
D.T. Mathes ◽  
J. Guenter ◽  
B. Hawkins ◽  
B. Hawthorne ◽  
C. Johnson
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Cavity Surface ◽  
Material Degradation ◽  
Root Cause ◽  
Transmission Electron ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Abstract AOC herein describes a collection of material degradation features observed in Vertical Cavity Surface Emitting Lasers (VCSELs) that have been intentionally degraded with a range of electrostatic discharge (ESD) stress conditions. Failure analysis techniques employed include emission microscopy, Focused Ion Beam (FIB) microscopy and Transmission Electron Microscopy (TEM). The results have enabled higher confidence in root-cause determination for failed VCSEL devices.

Passivation of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers by Amorphous GaAs Deposition

1995 ◽  
Vol 378 ◽  
Author(s):  
Hyo-Hoon Park ◽  
Byueng-Su Yoo ◽  
Min Soo Park ◽  
Jaejin Lee ◽  
Hae Gwon Lee ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Defect Density ◽  
Ion Beam ◽  
Threshold Current ◽  
Gaas Layer ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractWe report for the first time a successful application of semi-insulating amorphous GaAs layer for surface passivation of index-guided vertical-cavity surface-emitting lasers. The amorphous GaAs layers on ion-beam-etched active region and mirror layers provide a significant improvement, more than 20%, in the threshold current density and differential quantum efficiency. The improvement of these performances is attributed to low defect density at the surface of active layers induced by amorphous GaAs.

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