scholarly journals Памяти Е.М. Круглова и Филимонова В.В. Квантовый выход кремниевого лавинного фотодиода в диапазонах длин волн 114-170 и 210-1100 nm

Author(s):  
П.Н. Аруев ◽  
В.П. Белик ◽  
А.А. Блохин ◽  
В.В. Забродский ◽  
А.В. Николаев ◽  
...  

Avalanche silicon photodiode have been developted for near ir, visible, UV and VUV light range. External quantum efficiency have been studied in 114 - 170 abd 210 - 1100nm range. It is demonstrated that photodiode reach from 29 to 9300 electrons/photon on 160 nm with bias voltage of 190 and 303 v respectively.

1983 ◽  
Vol 22 (18) ◽  
pp. 2867 ◽  
Author(s):  
Edward F. Zalewski ◽  
C. Richard Duda

2016 ◽  
Vol 4 (9) ◽  
pp. 1787-1794 ◽  
Author(s):  
Liang-Jin Xu ◽  
Xu Zhang ◽  
Jin-Yun Wang ◽  
Zhong-Ning Chen

Strongly phosphorescent cationic Ag6Cu cluster complexes show highly efficient electroluminescence from solution-processed OLEDs with a current efficiency of 42.5 cd A−1 and an external quantum efficiency of 13.9% at a low bias voltage (4.5 V).


2020 ◽  
Vol 14 (1) ◽  
pp. 011004
Author(s):  
Shubhra S. Pasayat ◽  
Chirag Gupta ◽  
Matthew S. Wong ◽  
Ryan Ley ◽  
Michael J. Gordon ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuwei Guo ◽  
Sofia Apergi ◽  
Nan Li ◽  
Mengyu Chen ◽  
Chunyang Yin ◽  
...  

AbstractPerovskite light emitting diodes suffer from poor operational stability, exhibiting a rapid decay of external quantum efficiency within minutes to hours after turn-on. To address this issue, we explore surface treatment of perovskite films with phenylalkylammonium iodide molecules of varying alkyl chain lengths. Combining experimental characterization and theoretical modelling, we show that these molecules stabilize the perovskite through suppression of iodide ion migration. The stabilization effect is enhanced with increasing chain length due to the stronger binding of the molecules with the perovskite surface, as well as the increased steric hindrance to reconfiguration for accommodating ion migration. The passivation also reduces the surface defects, resulting in a high radiance and delayed roll-off of external quantum efficiency. Using the optimized passivation molecule, phenylpropylammonium iodide, we achieve devices with an efficiency of 17.5%, a radiance of 1282.8 W sr−1 m−2 and a record T50 half-lifetime of 130 h under 100 mA cm−2.


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