In-sensor optoelectronic computing using electrostatically doped silicon

Complementary metal-oxide-semiconductor (CMOS) image sensors are a visual outpost of many machines that interact with the world. While they presently separate image capture in front-end silicon photodiode arrays from image processing in digital back-ends, efforts to process images within the photodiode array itself are rapidly emerging, in hopes of minimizing the data transfer between sensing and computing, and the associated overhead in energy and bandwidth. Electrical modulation, or programming, of photocurrents is requisite for such in-sensor computing, which was indeed demonstrated with electrostatically doped, but non-silicon, photodiodes. CMOS image sensors are currently incapable of in-sensor computing, as their chemically doped photodiodes cannot produce electrically tunable photocurrents. Here we report in-sensor computing with an array of electrostatically doped silicon p-i-n photodiodes, which is amenable to seamless integration with the rest of the CMOS image sensor electronics. This silicon-based approach could more rapidly bring in-sensor computing to the real world due to its compatibility with the mainstream CMOS electronics industry. Our wafer-scale production of thousands of silicon photodiodes using standard fabrication emphasizes this compatibility. We then demonstrate in-sensor processing of optical images using a variety of convolutional filters electrically programmed into a 3 × 3 network of these photodiodes.

Памяти Е.М. Круглова и Филимонова В.В. Квантовый выход кремниевого лавинного фотодиода в диапазонах длин волн 114-170 и 210-1100 nm

Avalanche silicon photodiode have been developted for near ir, visible, UV and VUV light range. External quantum efficiency have been studied in 114 - 170 abd 210 - 1100nm range. It is demonstrated that photodiode reach from 29 to 9300 electrons/photon on 160 nm with bias voltage of 190 and 303 v respectively.

A Study on the Performance of a Silicon Photodiode Sensor for a Particle Dosimeter and Spectrometer

A lunar vehicle radiation dosimeter (LVRAD) has been proposed for studying the radiation environment on the lunar surface and evaluating its impact on human health. The LVRAD payload comprises four systems: a particle dosimeter and spectrometer (PDS), a tissue-equivalent dosimeter, a fast neutron spectrometer, and an epithermal neutron spectrometer. A silicon photodiode sensor with compact readout electronics was proposed for the PDS. The PDS system aims to measure protons with 10–100 MeV of energy and assess dose in the lunar space environment. The manufactured silicon photodiode sensor has an effective area of 20 mm × 20 mm and thickness of 650 μm; the electronics consist of an amplifier, analog pulse processor, and a 12-bit analog-to-digital converter for signal readout. We studied the responses of silicon sensors which were manufactured with self-made electronics to gamma rays with a wide range of energies and proton beams.

Thin Film Reflectance Model for Trap Detector

The physical model of the spectral responsivity of trap detector consists of multiple parameters such as the internal quantum efficiency and the spectral reflectance. In some measurement models, the spectral reflectance of the trap detector is approximated by fitting a wavelength dependence equation which does not consider the effect of the oxide thickness of the silicon photodiode. To analyse the uncertainty due to the oxide thickness variation, a thin film reflectance model is set up in the Standards and Calibration Laboratory (SCL) for the evaluation of the spectral reflectance of the trap detectors. The model is based on the Fresnel coefficients of a 3-layer thin film structure which consists of air and a thin film oxide layer on a silicon substrate. The reflectance model was implemented as user-defined functions to calculate the spectral reflectance at different oxide thickness. It was also integrated with the SCL’s MCM program to evaluate the uncertainty of the spectral responsivity of trap detectors.

Graphene-Mo2C heterostructure for highly responsive broadband photodetector

Photodetector based on intrinsic graphene can operate over a broad wavelength range with ultrafast response, but its responsivity is much lower than commercial silicon photodiode. The combination of graphene with...

Мощность излучения сильноточной вакуумной дуги, стабилизированной аксиальным магнитным полем, в видимой и ультрафиолетовой областях спектра

A silicon photodiode, was used to measure the power emitted by a vacuum arc in the ultraviolet and visible spectral regions. The measurements were carried out with the high-current vacuum arc stabilized by an axial magnetic field in regimes with developed anode activity. The power of radiation coming out of the arc through the side surface was measured. The results show that when analyzing the energy balance of a high-current vacuum arc, radiation must be taken into account.