scholarly journals The solar eclipse effect on diffusion processes of O+ + O2 → O2+ + O reaction for the upper ionosphere over Kharkov

2021 ◽  
Vol 25 (Spec. issue 1) ◽  
pp. 57-63
Author(s):  
Mehmet Yasar

The Sun is the most effective factor in determining all processes in the ionosphere. For this reason, examining the effect of solar eclipses on the earth ionosphere provides a very important source of information about sudden and medium-scale changes in the ionosphere structure during a solar eclipse. In this study, the effect of solar eclipse on March 29, 2006 in Kharkov on self-diffusion of O+ + O2 ? O2+ + O reaction was investigated depending on the altitude (202, 252, and 303 km). As a result of the investigation, the minimum value of self-diffusion coefficient was seen at three altitudes on March 29, 2006 at the time of full covering in the solar. Self-diffusion coefficients were found to increase with increasing altitude. The results of the experimental study conducted to examine the effect of the eclipse on the ionosphere using high frequency wave propagation in Turkey where it was seen total eclipse on March 29, 2006 and the result that we obtained in this research are consistent with each other.

2021 ◽  
Vol 25 (Spec. issue 1) ◽  
pp. 51-56
Author(s):  
Mehmet Yasar

Research on solar eclipses has been a very importance in detecting short and medium-scale changes in the ionosphere. In this paper, the relationship between the changes in self-diffusion coefficients (SDC) of the O+ + N2 ? NO+ + N reaction with the solar eclipse of March 29th, 2006 in Kharkov (49.6? N and 36.3? E) was investigated for 202, 252 and 303 km. The results of the research showed that self-diffusion coefficients increases with the increase of ionospheric altitude in each three days and the maximum diffusion value is reached at 303 km on 29th of March. It can be said that results of effects of solar eclipse in Turkey on ionosphere, results of the study of the experimental measurement and obtaining results of our study are consistent with one another.


Author(s):  
V Yu Ovsyannikov ◽  
A A Berestovoy ◽  
N N Lobacheva ◽  
V V Toroptsev ◽  
S A Trunov

Molecules ◽  
2021 ◽  
Vol 26 (13) ◽  
pp. 4030
Author(s):  
Gengbiao Chen ◽  
Zhiwen Liu

The diffusion behavior of fluid water in nanochannels with hydroxylation of silica gel and silanization of different modified chain lengths was simulated by the equilibrium molecular dynamics method. The diffusion coefficient of fluid water was calculated by the Einstein method and the Green–Kubo method, so as to analyze the change rule between the modification degree of nanochannels and the diffusion coefficient of fluid water. The results showed that the diffusion coefficient of fluid water increased with the length of the modified chain. The average diffusion coefficient of fluid water in the hydroxylated nanochannels was 8.01% of the bulk water diffusion coefficient, and the diffusion coefficients of fluid water in the –(CH2)3CH3, –(CH2)7CH3, and –(CH2)11CH3 nanochannels were 44.10%, 49.72%, and 53.80% of the diffusion coefficients of bulk water, respectively. In the above four wall characteristic models, the diffusion coefficients in the z direction were smaller than those in the other directions. However, with an increase in the silylation degree, the increased self-diffusion coefficient due to the surface effect could basically offset the decreased self-diffusion coefficient owing to the scale effect. In the four nanochannels, when the local diffusion coefficient of fluid water was in the range of 8 Å close to the wall, Dz was greater than Dxy, and beyond the range of 8 Å of the wall, the Dz was smaller than Dxy.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Parisa Jahanbakhsh Bonab ◽  
Alireza Rastkar Ebrahimzadeh ◽  
Jaber Jahanbin Sardroodi

AbstractDeep eutectic solvents (DESs) have received much attention in modern green chemistry as inexpensive and easy to handle analogous ionic liquids. This work employed molecular dynamics techniques to investigate the structure and dynamics of a DES system composed of choline chloride and phenyl propionic acid as a hydrogen bond donor and acceptor, respectively. Dynamical parameters such as mean square displacement, liquid phase self-diffusion coefficient and viscosity are calculated at the pressure of 0.1 MPa and temperatures 293, 321 and 400 K. The system size effect on the self-diffusion coefficient of DES species was also examined. Structural parameters such as liquid phase densities, hydrogen bonds, molecular dipole moment of species, and radial and spatial distribution functions (RDF and SDF) were investigated. The viscosity of the studied system was compared with the experimental values recently reported in the literature. A good agreement was observed between simulated and experimental values. The electrostatic and van der Waals nonbonding interaction energies between species were also evaluated and interpreted in terms of temperature. These investigations could play a vital role in the future development of these designer solvents.


1979 ◽  
Vol 87 (2-3) ◽  
pp. 341-344 ◽  
Author(s):  
Y. Oishi ◽  
Y. Kamei ◽  
M. Akiyama ◽  
T. Yanagi

1999 ◽  
Vol 568 ◽  
Author(s):  
Arthur F.W. Willoughby ◽  
Janet M. Bonar ◽  
Andrew D.N. Paine

ABSTRACTInterest in diffusion processes in SiGe alloys arises from their potential in HBT's, HFET's, and optoelectronics devices, where migration over distances as small as a few nanometres can be significant. Successful modelling of these processes requires a much improved understanding of the mechanisms of self- and dopant diffusion in the alloy, although recent progress has been made. It is the purpose of this review to set this in the context of diffusion processes in elemental silicon and germanium, and to identify how this can help to elucidate behaviour in the alloy. Firstly, self diffusion processes are reviewed, from general agreement that self-diffusion in germanium is dominated by neutral and acceptor vacancies, to the position in silicon which is still uncertain. Germanium diffusion in silicon, however, appears to be via both vacancy and interstitial processes, and in the bulk alloy there is evidence for a change in dominant mechanism at around 35 percent germanium. Next, a review of dopant diffusion begins with Sb, which appears to diffuse in germanium by a mechanism similar to self-diffusion, and in silicon via monovacancies also, from marker layer evidence. In SiGe, the effects of composition and strain in epitaxial layers on Si substrates are also consistent with diffusion via vacancies, but questions still remain on the role of charged defects. The use of Sb to monitor vacancy effects such as grown-in defects by low temperature MBE, are discussed. Lastly, progress in assessing the role of vacancies and interstitials in the diffusion of boron is reviewed, which is dominated by interstitials in silicon-rich alloys, but appears to change to domination by vacancies at around 40 percent germanium, although studies in pure germanium are greatly needed.


1987 ◽  
Vol 20 (5) ◽  
pp. 1133-1141 ◽  
Author(s):  
D. S. Pearson ◽  
G. Ver Strate ◽  
E. Von Meerwall ◽  
F. C. Schilling

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