scholarly journals Effects of Grain Boundary Misorientation on Radiation-Induced Solute Segregation in Proton Irradiated 304 Stainless Steels

2004 ◽  
Vol 45 (1) ◽  
pp. 40-50 ◽  
Author(s):  
Ji Jung Kai ◽  
Fu Rong Chen ◽  
Ting Shien Duh
2001 ◽  
Vol 7 (S2) ◽  
pp. 280-281
Author(s):  
G. D. Lian ◽  
A. Susalla ◽  
E. C. Dickey

A variety of properties of polycrystalline TiO2, such as conductivity, creep and grain boundary diffusion, are strongly dependent on the atomic-level structure and chemistry of grain boundaries. TiO2 has been studied as a model dielectric system because of its relatively simple structure and well-understood point defect chemistry. Defect segregation in grain boundaries of polycrystalline and bi-crystal TiO2 have been studied by several groups and significant variations in solute segregation levels from boundary to boundary were observed. in this paper, we address this issue of anisotropic grain boundary segregation. We have measured solute segregation as a function of grain boundary misorientation to determine any correlation between segregation and misorientation.Yttria-doped TiO2 polycrystalline samples were prepared by mixing 99.999% pure TiO2 powder with 0.1% mole percent 99.99% purity Y(NO3)3 (both powders are commercially available from Aldrich Co. or Alfa Co.), followed by uni-axial pressed to 200-400Pa and sintering at 1300 °C for about 5-7 hours.


Author(s):  
D. B. Williams ◽  
A. D. Romig

The segregation of solute or imparity elements to grain boundaries can occur by three well-defined processes. The first is Gibbsian segregation in which an element of minimal matrix solubility confines itself to a monolayer at the grain boundary. Classical examples include Bi in Cu and S or P in Fe. The second process involves the depletion of excess matrix solute by volume diffusion to the boundary. In the boundary, the solute atoms diffuse rapidly to precipitates, causing them to grow by the ‘collector-plate mechanism.’ Such grain boundary diffusion is thought to initiate “Diffusion-Induced Grain Boundary Migration,” (DIGM). This process has been proposed as the origin of eutectoid transformations or discontinuous grain boundary reactions. The third segregation process is non-equilibrium segregation which result in a solute build-up around the boundary because of solute-vacancy interactions.All of these segregation phenomena usually occur on a sub-micron scale and are often affected by the nature of the grain boundary (misorientation, defect structure, boundary plane).


Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5715
Author(s):  
Jun Ding ◽  
Sheng-Lai Zhang ◽  
Quan Tong ◽  
Lu-Sheng Wang ◽  
Xia Huang ◽  
...  

The effects of grain boundary misorientation angle (θ) on mechanical properties and the mechanism of plastic deformation of the Ni/Ni3Al interface under tensile loading were investigated using molecular dynamics simulations. The results show that the space lattice arrangement at the interface is dependent on grain boundary misorientations, while the interfacial energy is dependent on the arrangement. The interfacial energy varies in a W pattern as the grain boundary misorientation increases from 0° to 90°. Specifically, the interfacial energy first decreases and then increases in both segments of 0–60° and 60–90°. The yield strength, elastic modulus, and mean flow stress decrease as the interfacial energy increases. The mechanism of plastic deformation varies as the grain boundary misorientation angle (θ) increases from 0° to 90°. When θ = 0°, the microscopic plastic deformation mechanisms of the Ni and Ni3Al layers are both dominated by stacking faults induced by Shockley dislocations. When θ = 30°, 60°, and 80°, the mechanisms of plastic deformation of the Ni and Ni3Al layers are the decomposition of stacking faults into twin grain boundaries caused by extended dislocations and the proliferation of stacking faults, respectively. When θ = 90°, the mechanisms of plastic deformation of both the Ni and Ni3Al layers are dominated by twinning area growth resulting from extended dislocations.


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