scholarly journals Coordination Spheres Effect On RecompositionAtoms In AB Alloys

2017 ◽  
Vol 27 (4) ◽  
Author(s):  
Abdulhalim Kh. Ali ◽  
A. A. AL-Rubaiee ◽  
Marwah M. Abdulsttar

This study focused on the variation of the long-range order parameters with temperature for nine coordination spheres. The computer simulation results showed several mechanismsof atoms disordering. These mechanisms are represented in: (Substitution point defect, Clusters and Segregations, Micro domain, Antiphase order and Antiphase boundaries.  As the number of coordination spheres increase, the interatomic interaction increase with a decrease in the ordered phase stability. In the initial stages of the computer simulation two phases in the alloy is found, an ordered phase of   long-range order and ordered phase of   antiphase domain. In final stages an ordered phase of short –range order is found.  

1998 ◽  
Vol 523 ◽  
Author(s):  
C. Meenakarn ◽  
A. E. Staton-bevan ◽  
S. P. Najda ◽  
G. Duggan ◽  
A. H. Kean

AbstractA Transmission Electron Microscopy (TEM), Photoluminescence (PL) and Photoluminescence Excitation Spectroscopy (PLE) investigation has been conducted on Ga0.52In0.48P epilayers grown on (001) GaAs substrates by Gas-Source Molecular Beam Epitaxy.For Ga0.52In0.48P epilayers grown on exact (001) GaAs substrates, increasing the growth temperature from 480°C to 535°C increased the antiphase domain plate thickness, t, from 7.3±0.4 to 17.4±0.9 Å, and decreased the long range order parameter, n, from 0.32 to 0.18±0.1. For epilayers grown at 530°C, on GaAs(001) substrates off-cut 0°, 7°, 10° and 15° towards [111]A, increasing the substrate misorientation from 0° to 15° decreased the antiphase domain plate thickness, from 12.3±0.6 to 6.0±0.3 Å. The long range order parameter also decreased from 0.19 to 0.10±0.01.The band gap energies of these samples, grown by GS-MBE, were close to those reported for fully disordered Ga0.52In0.48P epilayers grown by MOCVD at ∼760°C. This shows that GSMBE is also a good technique to grow GaInP for high band gap optical data storage applications and at lower growth temperatures. The optimum growth conditions in this study were at a growth temperature of 530°C on (001) GaAs substrate with 15° off-cut towards [111]A.


2011 ◽  
Vol 233-235 ◽  
pp. 1782-1785
Author(s):  
Zhong Chu ◽  
Guo Qun Zhao

Based on the microscope phase-field model,the evolution of atom morphology, the long range order(lro) parameter and concentration can be gotten, and atomic clustering and ordering during the precipitation process of Ni-Cr-Al alloy could be obtained. The Ni-14at.%Cr-15.5at.%Al alloy is studied and the temperature of precipitation are 973K. It was showed that the ordering of both Al and Cr atoms take place simultaneously during the precipitation process of Ni-Al-Cr alloy, Cr atoms transfer to the boundaries of L12phases, the domain of rich Cr atoms are formed. At the boundaries of L12phases, Cr atoms may substitute the Al sublattice, and the D022phases are formed.


2002 ◽  
Vol 324 (1-2) ◽  
pp. 11-15 ◽  
Author(s):  
P. Oramus ◽  
R. Kozubski ◽  
V. Pierron-Bohnes ◽  
M.C. Cadeville ◽  
C. Massobrio ◽  
...  

1986 ◽  
Vol 56 (25) ◽  
pp. 2700-2703 ◽  
Author(s):  
C. F. Majkrzak ◽  
J. W. Cable ◽  
J. Kwo ◽  
M. Hong ◽  
D. B. McWhan ◽  
...  

1986 ◽  
Vol 57 (7) ◽  
pp. 923-923
Author(s):  
C. F. Majkrzak ◽  
J. W. Cable ◽  
J. Kwo ◽  
M. Hong ◽  
D. B. McWhan ◽  
...  

1999 ◽  
Vol 577 ◽  
Author(s):  
B.E. Meacham ◽  
K.W. Dennis ◽  
R.W. Mccallum ◽  
J.E. Shield

ABSTRACTThe effect of chemical order and defect structure on the magnetization process in Sm2Fe17 and Sm2Fe17Nx has been investigated. In Sm2Fe17, chemical disorder results in the development of random anisotropy and a small degree of magnetic hardness. The anisotropy is reduced as long-range order increases. The motion of domain walls in Sm2Fe17Nx is more dependent on the antiphase domain structure than on the amount of long-range order.


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