Non-volatile memory using a Ga-Sn-O TFT with a stacked gate insulator film of SiO2 and (Bi,La)4Ti3O12

Author(s):  
Tomoki Fukui ◽  
Koki Nakagawa ◽  
Mutsumi Kimura
2010 ◽  
Vol 1250 ◽  
Author(s):  
Pik-Yiu Chan ◽  
Mukesh Gogna ◽  
Ernesto Suarez ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
...  

AbstractThis paper presents the implementation of indium gallium arsenide field-effect transistors (InGaAs FETs) as non-volatile memory using lattice-matched II-VI gate insulator and quantum dots of GeOx-cladded Ge as the floating gate. Studies have been done to show the ability of II-VI materials to act as a tunneling gate material for InGaAs based FETs, and GeOx-cladded Ge quantum dots having the ability to store charges in the floating gate of a memory device. Proposed structure of the InGaAs device is presented.


Author(s):  
Masashi TAWADA ◽  
Shinji KIMURA ◽  
Masao YANAGISAWA ◽  
Nozomu TOGAWA

2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn

Author(s):  
Franz-Josef Streit ◽  
Florian Fritz ◽  
Andreas Becher ◽  
Stefan Wildermann ◽  
Stefan Werner ◽  
...  

2021 ◽  
Vol 2 ◽  
pp. 31-40
Author(s):  
Jiang Li ◽  
Yijun Cui ◽  
Chongyan Gu ◽  
Chenghua Wang ◽  
Weiqiang Liu ◽  
...  

2021 ◽  
Vol 15 (5) ◽  
Author(s):  
Haitao Wang ◽  
Zhanhuai Li ◽  
Xiao Zhang ◽  
Xiaonan Zhao ◽  
Song Jiang

AIP Advances ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 125124
Author(s):  
Xinyi Zhu ◽  
Longfei He ◽  
Yafen Yang ◽  
Kai Zhang ◽  
Hao Zhu ◽  
...  

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