The temperature dependence of heterostructure backward diodes based on the InAs/AlGaSb/GaSb material system for millimeter-wave detection has been investigated experimentally. Measured dc curvatures of 36 V-1 at 298 K and 74 V-1 at 4.2 K have been obtained. Variable-temperature on-wafer s-parameters to 110 GHz reveal that the junction capacitance of a typical 2×2 μ m 2 area device decreases from 18 fF at 298 K to 11 fF at 77 K, while the junction resistance decreases from 13.9 kΩ to 10.2 kΩ. Directly measured voltage sensitivities at 50 GHz of 3650 V/W and 7190 V/W were obtained at 298 K and 4.2 K, respectively, consistent with the expected value from measured dc curvature. A 1 dB compression point of 18.5 μW and 7.2 μW at 298 K and 77 K, respectively, was measured. A physical model based on self-consistent Poisson-Schrödinger equation solutions was obtained to explain the experimental observations, and suggests the ways to further improve the device performance.
Millimeter Wave Detection of Localized Anomalies in the Space Shuttle External Fuel Tank Insulating Foam and Acreage Heat Tiles
