Power cycling capability of high power IGBT modules with focus on short load pulse duration

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ◽

10.23919/ispsd.2017.7988971 ◽

2017 ◽

Author(s):

Guang Zeng ◽

Yijun Ye ◽

Josef Lutz ◽

Rodrigo Alvarez ◽

Pablo Correa

Keyword(s):

Pulse Duration ◽

Igbt Modules ◽

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Impact of load pulse duration on failure mechanism of high power IGBT modules under power cycling condition

The 16th IET International Conference on AC and DC Power Transmission (ACDC 2020) ◽

10.1049/icp.2020.0123 ◽

2021 ◽

Author(s):

J. Chen ◽

E. Deng ◽

L. Xie ◽

Z. Zhao ◽

Y. Wu ◽

...

Keyword(s):

Failure Mechanism ◽

Pulse Duration ◽

Igbt Modules ◽

Power Cycling ◽

Cycling Condition

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Impact of load pulse duration on power cycling lifetime of chip interconnection solder joints

Microelectronics Reliability ◽

10.1016/j.microrel.2017.06.081 ◽

2017 ◽

Vol 76-77 ◽

pp. 480-484 ◽

Author(s):

M. Junghaenel ◽

U. Scheuermann

Keyword(s):

Pulse Duration ◽

Solder Joints ◽

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Power cycling results of high power IGBT modules close to 50 Hz heating process

2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) ◽

10.23919/epe.2019.8915070 ◽

2019 ◽

Author(s):

Guang Zeng ◽

Rodrigo Alvarez ◽

Cesare Kunzel ◽

Josef Lutz

Keyword(s):

Heating Process ◽

Igbt Modules ◽

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Thermal analysis of power cycling effects on high power IGBT modules by the boundary element method

Seventeenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (Cat. No.01CH37189) ◽

10.1109/stherm.2001.915141 ◽

2002 ◽

Author(s):

Z. Khatir ◽

S. Lefebvre

Keyword(s):

Thermal Analysis ◽

Boundary Element Method ◽

Boundary Element ◽

Igbt Modules ◽

Power Cycling ◽

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Comparison of stress distributions and failure modes during thermal cycling and power cycling on high power IGBT modules

10.1109/epe.2007.4417457 ◽

2007 ◽

Author(s):

M. Bouarroudj ◽

Z. Khatir ◽

J.P. Ousten ◽

L. Dupont ◽

S. Lefebvre ◽

...

Keyword(s):

Thermal Cycling ◽

Failure Modes ◽

Stress Distributions ◽

Igbt Modules ◽

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Impact of load pulse duration on power cycling lifetime of Al wire bonds

Microelectronics Reliability ◽

10.1016/j.microrel.2013.06.019 ◽

2013 ◽

Vol 53 (9-11) ◽

pp. 1687-1691 ◽

Author(s):

U. Scheuermann ◽

R. Schmidt

Keyword(s):

Pulse Duration ◽

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Vce-based chip temperature estimation methods for high power IGBT modules during power cycling — A comparison

2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) ◽

10.1109/epe.2015.7309449 ◽

2015 ◽

Author(s):

Anastasios Amoiridis ◽

Anup Anurag ◽

Pramod Ghimire ◽

Stig Munk-Nielsen ◽

Nick Baker

Keyword(s):

Estimation Methods ◽

Temperature Estimation ◽

Chip Temperature ◽

Igbt Modules ◽

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Power cycling testing and FE modelling focussed on Al wire bond fatigue in high power IGBT modules

Microelectronics Reliability ◽

10.1016/j.microrel.2012.06.095 ◽

2012 ◽

Vol 52 (9-10) ◽

pp. 2347-2352 ◽

Author(s):

O. Schilling ◽

M. Schäfer ◽

K. Mainka ◽

M. Thoben ◽

F. Sauerland

Keyword(s):

Fe Modelling ◽

Wire Bond ◽

Igbt Modules ◽

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Analysis of insulation failure modes in high power IGBT modules

Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005. ◽

10.1109/ias.2005.1518425 ◽

2005 ◽

Author(s):

J.-H. Fabian ◽

S. Hartmann ◽

A. Hamidi

Keyword(s):

Failure Modes ◽

Insulation Failure ◽

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Degradation mapping in high power IGBT modules using four-point probing

Microelectronics Reliability ◽

10.1016/j.microrel.2015.05.011 ◽

2015 ◽

Vol 55 (8) ◽

pp. 1196-1204 ◽

Author(s):

Kristian Bonderup Pedersen ◽

Lotte Haxen Østergaard ◽

Pramod Ghimire ◽

Vladimir Popok ◽

Kjeld Pedersen

Keyword(s):

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