Power cycling results of high power IGBT modules close to 50 Hz heating process

2019 ◽  
Author(s):  
Guang Zeng ◽  
Rodrigo Alvarez ◽  
Cesare Kunzel ◽  
Josef Lutz
Keyword(s):  
High Power ◽  
Heating Process ◽  
Igbt Modules ◽  
Power Cycling

Comparison of stress distributions and failure modes during thermal cycling and power cycling on high power IGBT modules

2007 ◽  
Author(s):  
M. Bouarroudj ◽  
Z. Khatir ◽  
J.P. Ousten ◽  
L. Dupont ◽  
S. Lefebvre ◽  
...  
Keyword(s):  
Thermal Cycling ◽  
High Power ◽  
Failure Modes ◽  
Stress Distributions ◽  
Igbt Modules ◽  
Power Cycling

Power cycling capability of high power IGBT modules with focus on short load pulse duration

2017 ◽  
Author(s):  
Guang Zeng ◽  
Yijun Ye ◽  
Josef Lutz ◽  
Rodrigo Alvarez ◽  
Pablo Correa
Keyword(s):  
Pulse Duration ◽  
High Power ◽  
Load Pulse ◽  
Igbt Modules ◽  
Power Cycling

Power cycling testing and FE modelling focussed on Al wire bond fatigue in high power IGBT modules

2012 ◽  
Vol 52 (9-10) ◽  
pp. 2347-2352 ◽  
Author(s):  
O. Schilling ◽  
M. Schäfer ◽  
K. Mainka ◽  
M. Thoben ◽  
F. Sauerland
Keyword(s):  
High Power ◽  
Fe Modelling ◽  
Wire Bond ◽  
Igbt Modules ◽  
Power Cycling

Degradation mapping in high power IGBT modules using four-point probing

2015 ◽  
Vol 55 (8) ◽  
pp. 1196-1204 ◽  
Author(s):  
Kristian Bonderup Pedersen ◽  
Lotte Haxen Østergaard ◽  
Pramod Ghimire ◽  
Vladimir Popok ◽  
Kjeld Pedersen
Keyword(s):  
High Power ◽  
Igbt Modules

Failure Mechanism of Die-Attach Solder Joints in IGBT Modules Under Pulse High-Current Power Cycling

2019 ◽  
Vol 7 (1) ◽  
pp. 99-107 ◽  
Author(s):  
Yongle Huang ◽  
Yifei Luo ◽  
Fei Xiao ◽  
Binli Liu
Keyword(s):  
Failure Mechanism ◽  
Solder Joints ◽  
High Current ◽  
Die Attach ◽  
Igbt Modules ◽  
Power Cycling

Reliability Improvement of Aluminum Wirebonds in High‐Power Igbt Modules

1996 ◽  
Vol 445 ◽  
Author(s):  
Yujing Wu ◽  
Gene Thome ◽  
Timothy Scott Savage
Keyword(s):  
Grain Size ◽  
Crack Initiation ◽  
High Power ◽  
Fatigue Testing ◽  
Temperature Cycling ◽  
Grain Structure ◽  
Aluminum Wire ◽  
Significant Deterioration ◽  
Temperature Cycles ◽  
Igbt Modules

AbstractWirebonding is the weakest area of device packaging of power IGBT modules. Accelerated thermal fatigue testing causes cracks to form and propagate in the aluminum wirebond at the foot area. This study examined the relationship of the wirebond reliability and the aluminum wire grain structure, which can be affected by post‐wirebond heat treatment. A series of wirebonded IGBTs were annealed at a temperature range from 280°C to 400°C for up to 60 minutes. Wirebond shear strengths versus temperature cycles were examined. Cross‐sectional SEM was used to examine both aluminum grain size development by annealing and crack initiation and propagation in the wirebonds after temperature cycling. It was found that aluminum grain size was increased by post‐wirebond annealing. With temperature cycling, the wirebond shear strengths of the as‐wirebonded samples decrease rapidly, and lifted wirebonds were present after 1500 temperature cycles. The lifted wirebonds typically break within the aluminum wire near the wire/metallization interface. The shear strength of the wirebonds with post‐wirebond annealing showed no significant change even after 5000 temperature cycles, and there were no signs of significant deterioration of the wirebonds either. The wirebond crack initiation and growth rates were depressed substantially by larger aluminum grains. Annealing of the aluminum wire after wirebonding provided increased aluminum grain size resulting in improved reliability of the wirebonds of high power modules.

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