Built-in Oscillation-Based Testing of RF Amplifier Gain using Differential Power Detection

AbstractThis paper has simulated the pump laser automatic signal control for erbium-doped fiber amplifier gain, noise figure, and output spectral power. Signal gain and noise figure are deeply studied in relation to laser pump power variations at operating pumping wavelengths of 980 nm and 1,480 nm for previous and proposed models. Similar to the study of the light signal to noise ratio, output power level and maximum Q factor are also simulated versus EDFA amplifier length at pumping power of 500 mW and different pumping wavelength by using the proposed model. The obtained results are better by using a pumping wavelength of 1,480 nm than a pumping wavelength of 980 nm. The optimum EDFA amplifier is 5 m, which gives better performance than other amplifier lengths.

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Liquid Helium Temperature cw NMR S/N Improvement Using a MOSFET rf Amplifier

Review of Scientific Instruments ◽

10.1063/1.1684466 ◽

1970 ◽

Vol 41 (2) ◽

pp. 192-197 ◽

Cited By ~ 14

Author(s):

D. W. Alderman

Keyword(s):

Liquid Helium ◽

Liquid Helium Temperature ◽

Helium Temperature ◽

Rf Amplifier

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A New Self-Healing Methodology for RF Amplifier Circuits Based on Oscillation Principles

IEEE Transactions on Very Large Scale Integration (VLSI) Systems ◽

10.1109/tvlsi.2011.2163953 ◽

2012 ◽

Vol 20 (10) ◽

pp. 1835-1848 ◽

Cited By ~ 25

Author(s):

Abhilash Goyal ◽

Madhavan Swaminathan ◽

Abhijit Chatterjee ◽

Duane C. Howard ◽

John D. Cressler

Keyword(s):

Self Healing ◽

Rf Amplifier

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Integrated Photodiodes for On-chip Semiconductor Optical Amplifier Gain Measurement

Conference on Lasers and Electro-Optics ◽

10.1364/cleo_at.2018.jw2a.55 ◽

2018 ◽

Author(s):

Agnès Verdier ◽

Alexandre Garreau ◽

Karim Mekhazni ◽

Carmen Gomez ◽

Hélène Debregeas ◽

...

Keyword(s):

Semiconductor Optical Amplifier ◽

Optical Amplifier ◽

Gain Measurement ◽

Amplifier Gain ◽

On Chip

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A Low-Voltage RF Amplifier Using Parallel Triode MOSFET Linearizing Technique

2005 IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications ◽

10.1109/mape.2005.1618056 ◽

2006 ◽

Author(s):

Ke Cao ◽

Huazhong Yang ◽

Hui Wang

Keyword(s):

Low Voltage ◽

Rf Amplifier

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A 0.6-V to 1-V Audio ΔΣ Modulator in 65 nm CMOS with 90.2 dB SNDR at 0.6-V

VLSI Design ◽

10.1155/2013/353080 ◽

2013 ◽

Vol 2013 ◽

pp. 1-9 ◽

Cited By ~ 1

Author(s):

Liyuan Liu ◽

Dongmei Li ◽

Zhihua Wang

Keyword(s):

Power Dissipation ◽

Total Power ◽

Third Order ◽

Power Cost ◽

Threshold Voltages ◽

Nonlinear Amplifier ◽

Amplifier Gain ◽

Low Threshold ◽

Single Comparator ◽

Circuit Techniques

This paper presents a discrete time, single loop, third order ΔΣ modulator. The input feed forward technique combined with 5-bit quantizer is adopted to suppress swings of integrators. Harmonic distortions as well as the noise mixture due to the nonlinear amplifier gain are prevented. The design of amplifiers is hence relaxed. To reduce the area and power cost of the 5-bit quantizer, the successive approximation quantizer with only a single comparator instead of traditional flash quantizer is employed. Fabricated in 65 nm CMOS, the modulator achieves 95 dB peak SNDR at 1-V supply with 24 kHz. Thanks to low swing circuit techniques and low threshold voltages of devices, the peak SNDR maintains 90.2 dB under 0.6-V low supply. The total power dissipation is 371 μW at 1-V and drops to only 133 μW at 0.6-V.

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