A technique for phase-detection auto focus under near-infrared-ray incidence in a back-side illuminated CMOS image sensor pixel with selectively grown germanium on silicon

2020 ◽  
Author(s):  
Tatsuya Kunikiyo ◽  
Hidenori Sato ◽  
Takeshi Kamino ◽  
Koji Iizuka ◽  
Ken'ichiro Sonoda ◽  
...  
Keyword(s):  
Near Infrared ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Back Side ◽  
Phase Detection ◽  
Auto Focus ◽  
Near Infrared Ray

scholarly journals On Border Traps in Back-Side-Illuminated CMOS Image Sensor Oxides

2020 ◽  
Vol 67 (5) ◽  
pp. 2022-2027
Author(s):  
Andrea Vici ◽  
Felice Russo ◽  
Nicola Lovisi ◽  
Fernanda Irrera
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Back Side

Back-Side Illuminated CMOS Image Sensor Fabricated using Compliant Bump

2009 ◽  
Author(s):  
N. Watanabe ◽  
I. Tsunoda ◽  
T. Takao ◽  
K. Tanaka ◽  
T. Asano
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Back Side

Compliant bump technology for back-side illuminated CMOS image sensor

2009 ◽  
Author(s):  
Tanemasa Asano ◽  
Naoya Watanabe ◽  
Isao Tsunoda ◽  
Yasuhiro Kimiya ◽  
Katsuaki Fukunaga ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Back Side

Design of a CMOS image sensor pixel with embeddedpoly-silicon nano-grating for near-infrared imagingenhancement

2022 ◽  
Author(s):  
Elie Cobo ◽  
Sébastien Massenot ◽  
Alexandre Le Roch ◽  
Franck Corbière ◽  
Vincent Goiffon ◽  
...  
Keyword(s):  
Near Infrared ◽  
Cmos Image Sensor ◽  
Image Sensor

scholarly journals A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 486
Author(s):  
Ken Miyauchi ◽  
Kazuya Mori ◽  
Toshinori Otaka ◽  
Toshiyuki Isozaki ◽  
Naoto Yasuda ◽  
...  
Keyword(s):  
Dynamic Range ◽  
High Sensitivity ◽  
Cmos Image Sensor ◽  
Light Sensitivity ◽  
Image Sensor ◽  
Motion Artifacts ◽  
Oxide Semiconductor ◽  
Storage Capacitor ◽  
Cmos Process ◽  
Back Side

A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for the photon-to-voltage conversion are formed on the top substrate (the first layer). Each voltage signal from the first layer pixel is stored in the sample-and-hold capacitors on the bottom substrate (the second layer) via micro-bump interconnection to achieve a voltage domain GS function. The two sets of voltage domain storage capacitor per pixel enable a multiple gain readout to realize single exposure high dynamic range (SEHDR) in the GS operation. As a result, an 80dB SEHDR GS operation without rolling shutter distortions and motion artifacts has been achieved. Additionally, less than −140dB parasitic light sensitivity, small noise floor, high sensitivity and good angular response have been achieved.

scholarly journals A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3642 ◽  
Author(s):  
Yutaka Hirose ◽  
Shinzo Koyama ◽  
Motonori Ishii ◽  
Shigeru Saitou ◽  
Masato Takemoto ◽  
...  
Keyword(s):  
Near Infrared ◽  
Time Of Flight ◽  
Depth Map ◽  
Complementary Metal Oxide Semiconductor ◽  
Laser Pulses ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Pixel Circuit

We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 × 384 pixels array of vertical avalanche photodiodes (VAPD). Each pixel of the CIS comprises VAPD with a standard four transistor pixel circuit equipped with an analogue capacitor to accumulate or count avalanche pulses. High power near infrared (NIR) short (<50 ns) and repetitive (6 kHz) laser pulses are illuminated through a diffusing optics. By globally gating the VAPD, each pulse is counted in the in-pixel counter enabling extraction of sub-photon level signal. Depth map imaging with a 10 cm lateral resolution is realized from 1 m to 250 m range by synthesizing subranges images of photon counts. Advantages and limitation of an in-pixel circuit are described. The developed CIS is expected to supersede insufficient resolution of the conventional light detection and ranging (LiDAR) systems and the short range of indirect CIS TOF.

scholarly journals Improved near-infrared sensitivity of a back-side illuminated image sensor with a metal reflector

2009 ◽  
Vol 6 (6) ◽  
pp. 341-346 ◽  
Author(s):  
Tetsuya Ariyoshi ◽  
Shozo Morita ◽  
Akiyoshi Baba ◽  
Yutaka Arima
Keyword(s):  
Near Infrared ◽  
Image Sensor ◽  
Back Side
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