A 24.3Me− Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging

2018 ◽  
Author(s):  
M. Murata ◽  
R. Kuroda ◽  
Y. Fujihara ◽  
Y. Aoyagi ◽  
H. Shibata ◽  
...  
Keyword(s):  
High Precision ◽  
Infrared Absorption ◽  
Near Infrared ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Absorption Imaging

High-precision methane isotopic abundance analysis using near-infrared absorption spectroscopy at 100 Torr

The Analyst ◽  
2021 ◽  
Author(s):  
Zhiwei Liu ◽  
Chuantao Zheng ◽  
Tianyu Zhang ◽  
Yu Zhang ◽  
Yiding Wang ◽  
...  
Keyword(s):  
High Precision ◽  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Near Infrared ◽  
Sensor System ◽  
Infrared Absorption Spectroscopy ◽  
Isotopic Abundance ◽  
Laser Absorption Spectroscopy ◽  
Laser Absorption ◽  
Carbon Isotopic

A near-infrared methane (CH4) sensor system for carbon isotopic abundance analysis was developed based on laser absorption spectroscopy (LAS).

A CMOS Image Sensor with a Novel Passive Pixel Array and High Precision Current Amplifier for a Compact Digital X-ray Detector

2020 ◽  
Vol 10 (11) ◽  
pp. 2745-2753
Author(s):  
Jimin Cheon ◽  
Dongmyung Lee ◽  
Hojong Choi
Keyword(s):  
High Precision ◽  
Dynamic Range ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Total Power ◽  
Cmos Process ◽  
Current Amplifier ◽  
X Ray ◽  
Total Power Consumption ◽  
Pixel Array

An active pixel sensor (APS) in a digital X-ray detector is the dominant circuitry for a CMOS image sensor (CIS) despite its lower fill factor (FF) compared to that of a passive pixel sensor (PPS). Although the PPS provides higher FF, its overall signal-to-noise ratio (SNR) is lower than that of the APS. The required high resolution and small focal plane can be achieved by reducing the number of transistors and contacts per pixel. We proposed a novel passive pixel array and a high precision current amplifier to improve the dynamic range (DR) without minimizing the sensitivity for diagnostic compact digital X-ray detector applications. The PPS can be an alternative to improve the FF. However, size reduction of the feedback capacitor causes degradation of SNR performance. This paper proposes a novel PPS based on readout and amplification circuits with a high precision current amplifier to minimize performance degradation. The expected result was attained with a 0.35-μm CMOS process parameter with power supply voltage of 3.3 V. The proposed PPS has a saturation signal of 1.5 V, dynamic range of 63.5 dB, and total power consumption of 13.47 mW. Therefore, the proposed PPS readout circuit improves the dynamic range without sacrificing the sensitivity.

Near-infrared absorption imaging of dense scattering media by steady-state diffusion tomography

1993 ◽  
Author(s):  
Harry L. Graber ◽  
Jeng-Hua Chang ◽  
Jack Lubowsky ◽  
Raphael Aronson ◽  
Randall L. Barbour
Keyword(s):  
Steady State ◽  
Infrared Absorption ◽  
Near Infrared ◽  
Scattering Media ◽  
Absorption Imaging ◽  
State Diffusion ◽  
Steady State Diffusion

Design of a CMOS image sensor pixel with embeddedpoly-silicon nano-grating for near-infrared imagingenhancement

2022 ◽  
Author(s):  
Elie Cobo ◽  
Sébastien Massenot ◽  
Alexandre Le Roch ◽  
Franck Corbière ◽  
Vincent Goiffon ◽  
...  
Keyword(s):  
Near Infrared ◽  
Cmos Image Sensor ◽  
Image Sensor

22am2-F8 Observation of Acid-Base Mixture Region in Microchannel by using Near-Infrared Absorption Imaging Method

2014 ◽  
Vol 2014.6 (0) ◽  
pp. _22am2-F8--_22am2-F8-
Author(s):  
Daisuke KAWASHIMA ◽  
Naoto KAKUTA ◽  
Katsuya KONDO ◽  
Hidenobu ARIMOTO ◽  
Yukio YAMADA
Keyword(s):  
Infrared Absorption ◽  
Near Infrared ◽  
Imaging Method ◽  
Acid Base ◽  
Absorption Imaging
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