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Ag Ionic Memory Cell Technology for Terabit-Scale High-Density Application
2019 Symposium on VLSI Technology
◽
10.23919/vlsit.2019.8776568
◽
2019
◽
Cited By ~ 2
Author(s):
Shosuke Fujii
◽
Reika Ichihara
◽
Takuya Konno
◽
Marina Yamaguchi
◽
Harumi Seki
◽
...
Keyword(s):
Memory Cell
◽
High Density
◽
Cell Technology
Download Full-text
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A novel 4.6F/sup 2/ NOR cell technology with lightly doped source (LDS) junction for high density flash memories
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
◽
10.1109/iedm.1998.746518
◽
2002
◽
Author(s):
Jonghan Kim
◽
Jeong-Hyuk Choi
◽
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◽
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Memory Cell Technology
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◽
10.1201/9780429332371-2
◽
2019
◽
pp. 15-38
Author(s):
Hiroyuki Tango
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Memory Cell
◽
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A novel NVRAM cell technology for high density applications
10.1109/iedm.1988.32844
◽
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Author(s):
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◽
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◽
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A Study on High Density Gate-Oxide Anti-Fuse PROM Memory Cell Program Features
MATEC Web of Conferences
◽
10.1051/matecconf/20167510004
◽
2016
◽
Vol 75
◽
pp. 10004
Author(s):
Keqin Yang
◽
Suge Yue
◽
Shijin Lu
Keyword(s):
Memory Cell
◽
Gate Oxide
◽
High Density
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Novel 0.44 μm/sup 2/ Ti-salicide STI cell technology for high-density NOR flash memories and high performance embedded application
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
◽
10.1109/iedm.1998.746517
◽
2002
◽
Author(s):
H. Watanabe
◽
S. Yamada
◽
M. Tanimoto
◽
M. Matsui
◽
S. Kitamura
◽
...
Keyword(s):
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◽
High Density
◽
Flash Memories
◽
Cell Technology
◽
Embedded Application
◽
Nor Flash
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Double-sided rugged poly Si FIN STC (stacked capacitor cell) technology for high density DRAMs
10.1109/drc.1994.1009413
◽
2005
◽
Cited By ~ 1
Author(s):
H. Ogihara
◽
M. Yoshimaru
◽
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◽
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Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications
ECS Meeting Abstracts
◽
10.1149/ma2007-02/25/1296
◽
2007
◽
Keyword(s):
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◽
High Reliability
◽
Memory Cell
◽
High Density
◽
Floating Gate
◽
Cell Structures
◽
Flash Memory Cell
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A True 6F2 NOR Flash Memory Cell Technology - Impact of Floating Gate B4-Flash on NOR Scaling
2011 3rd IEEE International Memory Workshop (IMW)
◽
10.1109/imw.2011.5873217
◽
2011
◽
Cited By ~ 2
Author(s):
S. Shimizu
◽
S. Shukuri
◽
N. Ajika
◽
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◽
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◽
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Keyword(s):
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◽
Memory Cell
◽
Floating Gate
◽
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◽
Flash Memory Cell
◽
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The 1.44F/sup 2/ memory cell technology with the stacked-surrounding gate transistor (S-SGT) DRAM
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)
◽
10.1109/icmel.2000.838730
◽
2002
◽
Author(s):
T. Endoh
◽
H. Sakuraba
◽
K. Shinmei
◽
F. Masuoka
Keyword(s):
Memory Cell
◽
Cell Technology
◽
Surrounding Gate
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A trimless, 0.5V–1.0V wide voltage operation, high density SRAM macro utilizing dynamic cell stability monitor and multiple memory cell access
IEEE Asian Solid-State Circuits Conference 2011
◽
10.1109/asscc.2011.6123627
◽
2011
◽
Cited By ~ 5
Author(s):
K. Kushida
◽
O. Hirabayashi
◽
F. Tachibana
◽
H. Hara
◽
A. Kawasumi
◽
...
Keyword(s):
Memory Cell
◽
High Density
◽
Dynamic Cell
◽
Cell Stability
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